MRF160
MOSFET. Datasheet pdf. Equivalent
Type Designator: MRF160
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 24
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 65
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 40
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 6
V
|Id|ⓘ - Maximum Drain Current: 1
A
Tjⓘ - Maximum Junction Temperature: 200
°C
Cossⓘ -
Output Capacitance: 8
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 9.091
Ohm
Package: CASE249-06
MRF160
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MRF160
Datasheet (PDF)
..1. Size:122K motorola
mrf160.pdf 
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF160/DThe RF MOSFET LinePower Field Effect TransistorNChannel EnhancementMode MOSFETMRF160Designed primarily for wideband largesignal output and driver from30500 MHz. Typical Performance at 400 MHz, 28 VdcOutput Power = 4.0 WattsGain = 17 dB4.0 W, to 400 MHzEfficiency = 50%MOSFET BROADBAND
..2. Size:527K macom
mrf160.pdf
MRF160 The RF MOSFET Line: Broadband Power FET M/A-COM Products Released - Rev. 07.07 4W, to 500MHz, 28V Product Image Designed primarily for wideband largesignal output and driver from 30500 MHz. NChannel enhancement mode MOSFET Guaranteed 28 V, 500 MHz performance Output power = 4.0 W Gain = 16 dB (min.) Efficiency = 55% (typ.) Excellent thermal s
0.1. Size:108K motorola
mrf16030rev3.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF16030/DThe RF LineMRF16030NPN SiliconRF Power TransistorDesigned for 28 Volt microwave largesignal, common base, ClassC CWamplifier applications in the range 1600 1640 MHz.30 WATTS, 1.6 GHz Specified 28 Volt, 1.6 GHz ClassC CharacteristicsRF POWER TRANSISTOROutput Power = 30 WattsNPN SILICON
0.2. Size:81K motorola
mrf16030.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF16030/DThe RF LineMRF16030NPN SiliconRF Power TransistorDesigned for 28 Volt microwave largesignal, common base, ClassC CWamplifier applications in the range 1600 1640 MHz.30 WATTS, 1.6 GHz Specified 28 Volt, 1.6 GHz ClassC CharacteristicsRF POWER TRANSISTOROutput Power = 30 WattsNPN SILICON
0.3. Size:82K motorola
mrf16006.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF16006/DThe RF LineMRF16006NPN SiliconRF Power TransistorDesigned for 28 Volt microwave largesignal, common base, ClassC CWamplifier applications in the range 1600 1640 MHz.6.0 WATTS, 1.6 GHz Specified 28 Volt, 1.6 GHz ClassC Characteristics RF POWER TRANSISTOROutput Power = 6 WattsNPN SILICO
0.4. Size:122K motorola
mrf160re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF160/DThe RF MOSFET LinePower Field Effect TransistorNChannel EnhancementMode MOSFETMRF160Designed primarily for wideband largesignal output and driver from30500 MHz. Typical Performance at 400 MHz, 28 VdcOutput Power = 4.0 WattsGain = 17 dB4.0 W, to 400 MHzEfficiency = 50%MOSFET BROADBAND
0.5. Size:171K macom
mrf16006.pdf
MRF16006 The RF Line NPN Silicon Power Transistor M/A-COM Products Released - Rev. 07.07 6.0W , 1.6GHz, 28V Product Image Designed for 28 V microwave largesignal, common base, Class C, CW amplifier applications in the range 1600 1640 MHz. Specified 28 V, 1.6 GHz Class C characteristics Output power = 6 W Minimum gain = 7.4 dB, @ 6 W Minimum efficiency = 40% @
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