MRF177 Datasheet and Replacement

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF177/DThe RF MOSFET LineMRF177RF PowerField Effect TransistorsNChannel Enhancement Mode MOSFET100 W, 28 V, 400 MHzDesigned for broadband commercial and military applications up to 400 MHzNCHANNELfrequency range. Primarily used as a driver or output amplifier in pushpullBROADBANDconfigurations. Can b

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF177/DThe RF MOSFET LineRF PowerMRF177Field Effect TransistorsMRF177MNChannel Enhancement Mode MOSFETsDesigned for broadband commercial and military applications up to 400 MHzfrequency range. Primarily used as drivers or output amplifiers in pushpullconfigurations. Can be used in manual gain control, ALC a

MRF177 The RF MOSFET Line M/A-COM Products Released - Rev. 07.07 100W, 400MHz, 28V Designed for broadband commercial and military applications up to 400 Product Image MHz frequency range. Primarily used as a driver or output amplifier in pushpull configurations. Can be used in manual gain control, ALC and modulation circuits. NChannel enhancement mode MOSFET Typi

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF177/DThe RF MOSFET LineRF PowerMRF177Field Effect TransistorsMRF177MNChannel Enhancement Mode MOSFETsDesigned for broadband commercial and military applications up to 400 MHzfrequency range. Primarily used as drivers or output amplifiers in pushpullconfigurations. Can be used in manual gain control, ALC a

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF177/DThe RF MOSFET LineMRF177RF PowerField Effect TransistorsNChannel Enhancement Mode MOSFET100 W, 28 V, 400 MHzDesigned for broadband commercial and military applications up to 400 MHzNCHANNELfrequency range. Primarily used as a driver or output amplifier in pushpullBROADBANDconfigurations. Can b

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF176GU/DThe RF MOSFET LineRF PowerMRF176GUField-Effect TransistorsMRF176GVNChannel EnhancementModeDesigned for broadband commercial and military applications using push pullcircuits at frequencies to 500 MHz. The high power, high gain and broadbandperformance of these devices makes possible solid state tra

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF175LU/DThe RF MOSFET LineRF PowerMRF175LUField-Effect TransistorsMRF175LVNChannel EnhancementModeDesigned for broadband commercial and military applications using singleended circuits at frequencies to 400 MHz. The high power, high gain andbroadband performance of each device makes possible solid state tr

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF176GU/DThe RF MOSFET LineRF PowerMRF176GUField-Effect TransistorsMRF176GVNChannel EnhancementModeDesigned for broadband commercial and military applications using push pullcircuits at frequencies to 500 MHz. The high power, high gain and broadbandperformance of these devices makes possible solid state tra

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF175GU/DThe RF MOSFET LineRF PowerMRF175GUField-Effect TransistorsMRF175GVNChannel EnhancementModeDesigned for broadband commercial and military applications using push pullcircuits at frequencies to 500 MHz. The high power, high gain and broadbandperformance of these devices makes possible solid state tra

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF174/DThe RF MOSFET LineRF Power Field Effect TransistorNChannel EnhancementMode MRF174. . . designed primarily for wideband largesignal output and driver stages up to200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 VdcOutput Power = 125 WattsMinimum Gain = 9.0 dB125 W, to 200 MHzEffi

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF171/DThe RF MOSFET LineRF Power Field Effect TransistorNChannel EnhancementMode MRF171. . . designed primarily for wideband largesignal output and driver stages up to200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 VdcOutput Power = 45 WattsMinimum Gain = 12 dB45 W, to 200 MHzEfficie

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF175LU/DThe RF MOSFET LineRF PowerMRF175LUField-Effect TransistorsMRF175LVNChannel EnhancementMode. . . designed for broadband commercial and military applications using singleended circuits at frequencies to 400 MHz. The high power, high gain andbroadband performance of each device makes possible solid st

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF175LU/DThe RF MOSFET LineRF PowerMRF175LUField-Effect TransistorsMRF175LVNChannel EnhancementModeDesigned for broadband commercial and military applications using singleended circuits at frequencies to 400 MHz. The high power, high gain andbroadband performance of each device makes possible solid state tr

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF176GU/DThe RF MOSFET LineRF PowerMRF176GUField-Effect TransistorsMRF176GVNChannel EnhancementModeDesigned for broadband commercial and military applications using push pullcircuits at frequencies to 500 MHz. The high power, high gain and broadbandperformance of these devices makes possible solid state tra

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF173/DThe RF MOSFET LineRF PowerMRF173Field Effect TransistorsNChannel Enhancement Mode MOSFETsDesigned for broadband commercial and military applications up to 200 MHzfrequency range. The highpower, highgain and broadband performance ofthese devices make possible solid state transmitters for FM broadcast

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF174/DThe RF MOSFET LineRF Power Field Effect TransistorNChannel EnhancementMode MRF174. . . designed primarily for wideband largesignal output and driver stages up to200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 VdcOutput Power = 125 WattsMinimum Gain = 9.0 dB125 W, to 200 MHzEffi

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF175LU/DThe RF MOSFET LineRF PowerMRF175LUField-Effect TransistorsMRF175LVNChannel EnhancementModeDesigned for broadband commercial and military applications using singleended circuits at frequencies to 400 MHz. The high power, high gain andbroadband performance of each device makes possible solid state tr

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF173/DThe RF MOSFET LineRF PowerMRF173Field Effect TransistorsMRF173CQNChannel Enhancement Mode MOSFETsDesigned for broadband commercial and military applications up to 200 MHzfrequency range. The highpower, highgain and broadband performance ofthese devices make possible solid state transmitters for FM

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF173/DThe RF MOSFET LineRF PowerMRF173Field Effect TransistorsNChannel Enhancement Mode MOSFETsDesigned for broadband commercial and military applications up to 200 MHzfrequency range. The highpower, highgain and broadband performance ofthese devices make possible solid state transmitters for FM broadcast

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF171/DThe RF MOSFET LineRF Power Field Effect TransistorNChannel EnhancementMode MRF171. . . designed primarily for wideband largesignal output and driver stages up to200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 VdcOutput Power = 45 WattsMinimum Gain = 12 dB45 W, to 200 MHzEfficie

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF175GU/DThe RF MOSFET LineRF PowerMRF175GUField-Effect TransistorsMRF175GVNChannel EnhancementModeDesigned for broadband commercial and military applications using push pullcircuits at frequencies to 500 MHz. The high power, high gain and broadbandperformance of these devices makes possible solid state tra

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF174/DThe RF MOSFET LineRF Power Field Effect TransistorNChannel EnhancementMode MRF174. . . designed primarily for wideband largesignal output and driver stages up to200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 VdcOutput Power = 125 WattsMinimum Gain = 9.0 dB125 W, to 200 MHzEffi

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF173/DThe RF MOSFET LineRF PowerMRF173Field Effect TransistorsMRF173CQNChannel Enhancement Mode MOSFETsDesigned for broadband commercial and military applications up to 200 MHzfrequency range. The highpower, highgain and broadband performance ofthese devices make possible solid state transmitters for FM

MRF173 The RF MOSFET Line M/A-COM Products Released - Rev. 07.07 80W, 175MHz, 28V Designed for broadband commercial and military applications up to Product Image 200 MHz frequency range. The highpower, highgain and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands. NChannel enhancement mode MOS

MRF171A The RF MOSFET Line M/A-COM Products Released - Rev. 07.07 45W, 150MHz, 28V Designed primarily for wideband largesignal output and driver stages from Product Image 30200 MHz. NChannel enhancement mode MOSFET Guaranteed performance at 150 MHz, 28 Vdc Output power = 45 W Power gain = 17 dB (min) Efficiency = 60% (min) Excellent thermal stabilit