BRB10N65 Specs and Replacement

Type Designator: BRB10N65

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 69 nS

Cossⓘ - Output Capacitance: 166 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: TO-263

BRB10N65 substitution

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BRB10N65 datasheet

 ..1. Size:1027K  blue-rocket-elect
 brb10n65.pdf pdf_icon

BRB10N65

BRB10N65 Rev.E Sep.-2022 DATA SHEET / Descriptions TO-263 N MOS N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features , , , Low gate charge, low crss, fast switching, HF product. / Applications DC/DC These devices are well ... See More ⇒

 9.1. Size:710K  blue-rocket-elect
 brb100n03.pdf pdf_icon

BRB10N65

BRB100N03 Rev.A Jul.-2016 DATA SHEET / Descriptions TO-263 N MOS N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficien... See More ⇒

Detailed specifications: BR40N20, BR4N70, BR50N03, BR6N70, BR7N65, BRA10N65, BRA7N65, BRB100N03, IRF1405, BRB13N50, BRB4N60, BRB70R1K2, BRB80N08A, BRB840, BRCS010N03SZC, BRCS010N04SZC, BRCS015N04SZC

Keywords - BRB10N65 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs