BRCS010N03SZC Datasheet and Replacement
Type Designator: BRCS010N03SZC
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 208 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id| ⓘ - Maximum Drain Current: 370 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 107 nC
tr ⓘ - Rise Time: 12.8 nS
Cossⓘ - Output Capacitance: 2555 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
Package: PDFN5X6
BRCS010N03SZC substitution
BRCS010N03SZC Datasheet (PDF)
brcs010n03szc.pdf

BRCS010N03SZC Rev.A May.-2022 DATA SHEET / Descriptions PDFN56 N N-Channel MOSFET in a PDFN56 Plastic Package . / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance;
brcs010n04szc.pdf

BRCS010N04SZC Rev.B May.-2023 DATA SHEET / Descriptions PDFN56 N N-Channel MOSFET in a PDFN56 Plastic Package. / Features Low R to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance; DS(ON
brcs016n03szc.pdf

BRCS016N03SZC Rev.B Mar.-2021 DATA SHEET / Descriptions PDFN5*6 N N-Channel MOSFET in a PDFN5*6 Plastic Package . / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance;HF
brcs016n03dp.pdf

BRCS016N03DP Rev.A Jan.-2022 DATA SHEET / Descriptions TO-252 N N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching,Halogen-free Product. / Applications
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: AO4444
Keywords - BRCS010N03SZC MOSFET datasheet
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History: AO4444



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