NDS8434 PDF and Equivalents Search

 

NDS8434 Specs and Replacement

Type Designator: NDS8434

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 6.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: SO8

NDS8434 substitution

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NDS8434 datasheet

 ..1. Size:198K  fairchild semi
nds8434.pdf pdf_icon

NDS8434

June 1996 NDS8434 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect -6.5A, -20V. RDS(ON) = 0.035 @ VGS = -4.5V transistors are produced using Fairchild's proprietary, high cell RDS(ON) = 0.05 @ VGS = -2.7V. density, DMOS technology. This very high density process is High density cell design fo... See More ⇒

 ..2. Size:310K  onsemi
nds8434.pdf pdf_icon

NDS8434

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 0.1. Size:1458K  cn vbsemi
nds8434a.pdf pdf_icon

NDS8434

NDS8434A www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition a 0.015 at VGS = - 4.5 V TrenchFET Power MOSFET - 13 a 100 % Rg Tested 0.026 at VGS = - 2.5 V - 20 20 nC - 10 Built in ESD Protection with Zener Diode 0.065 at VGS = - 1.8 V - 8 Typical ... See More ⇒

 8.1. Size:197K  fairchild semi
nds8435a.pdf pdf_icon

NDS8434

March 1997 NDS8435A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancement mode power field effect -7.9 A, -30 V. RDS(ON) = 0.023 @ VGS = -10 V transistors are produced using Fairchild's proprietary, high cell RDS(ON) = 0.035 @ VGS = -4.5V. density, DMOS technology. This very high density process is High density cell ... See More ⇒

Detailed specifications: FQD12N20L, FQD5N50C, FQD12N20LTMF085, NDS9952A, FQD12P10TMF085, FQD13N06, FQD13N06L, FQD13N10, AON6380, FQD13N10L, MTD3055V, FQD16N25C, FQD17N08L, FQD17P06, FQD18N20V2, MTD3055VL, FQD19N10

Keywords - NDS8434 MOSFET specs

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