NDS8434 Specs and Replacement
Type Designator: NDS8434
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 6.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: SO8
NDS8434 substitution
- MOSFET ⓘ Cross-Reference Search
NDS8434 datasheet
nds8434.pdf
June 1996 NDS8434 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect -6.5A, -20V. RDS(ON) = 0.035 @ VGS = -4.5V transistors are produced using Fairchild's proprietary, high cell RDS(ON) = 0.05 @ VGS = -2.7V. density, DMOS technology. This very high density process is High density cell design fo... See More ⇒
nds8434.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
nds8434a.pdf
NDS8434A www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition a 0.015 at VGS = - 4.5 V TrenchFET Power MOSFET - 13 a 100 % Rg Tested 0.026 at VGS = - 2.5 V - 20 20 nC - 10 Built in ESD Protection with Zener Diode 0.065 at VGS = - 1.8 V - 8 Typical ... See More ⇒
nds8435a.pdf
March 1997 NDS8435A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancement mode power field effect -7.9 A, -30 V. RDS(ON) = 0.023 @ VGS = -10 V transistors are produced using Fairchild's proprietary, high cell RDS(ON) = 0.035 @ VGS = -4.5V. density, DMOS technology. This very high density process is High density cell ... See More ⇒
Detailed specifications: FQD12N20L, FQD5N50C, FQD12N20LTMF085, NDS9952A, FQD12P10TMF085, FQD13N06, FQD13N06L, FQD13N10, AON6380, FQD13N10L, MTD3055V, FQD16N25C, FQD17N08L, FQD17P06, FQD18N20V2, MTD3055VL, FQD19N10
Keywords - NDS8434 MOSFET specs
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History: FDMQ8203 | 4N60KL-TMS4-T | SI4848ADY
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