BRCS020N06SBD Specs and Replacement

Type Designator: BRCS020N06SBD

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 166 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 3500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm

Package: TO-263

BRCS020N06SBD substitution

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BRCS020N06SBD datasheet

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BRCS020N06SBD

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 brcs020n06sra.pdf pdf_icon

BRCS020N06SBD

BRCS020N06SRA Rev.A Feb.-2023 DATA SHEET / Descriptions TO-220 N N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , Ultra Low On-Resistance,fast switching. / Applications PFC These d... See More ⇒

 5.1. Size:1038K  blue-rocket-elect
 brcs020n04zc.pdf pdf_icon

BRCS020N06SBD

BRCS020N04ZC Rev.A Mar.-2022 DATA SHEET / Descriptions PDFN5 6 N N-Channel MOSFET in a PDFN5 6 Plastic Package . / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance;H... See More ⇒

 5.2. Size:1908K  blue-rocket-elect
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BRCS020N06SBD

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Detailed specifications: BRCS016N03DP, BRCS016N03SZC, BRCS016N03ZC, BRCS020N03RA, BRCS020N03ZC, BRCS020N04BD, BRCS020N04RA, BRCS020N04ZC, AO4468, BRCS020N06SRA, BRCS025N04DP, BRCS030N03DP, BRCS030N03ZC, BRCS030N04DP, BRCS030N06SBD, BRCS030N06SZC, BRCS030N10SHBD

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