2SK3080 PDF and Equivalents Search

 ..1. Size:45K  1
 2sk3080.pdf

2SK3080 Silicon N Channel MOS FET High Speed Power Switching ADE-208-635A (Z) 2nd. Edition Mar. 2001 Features Low on-resistance RDS(on) = 20 m typ. (VGS = 10V, ID = 15 A) 4V gate drive devices. High speed switching Outline TO 220AB D G 1. Gate 1 2. Drain(Flange) 2 3. Source 3 S 2SK3080 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drai... See More ⇒

 ..2. Size:289K  inchange semiconductor
 2sk3080.pdf

isc N-Channel MOSFET Transistor 2SK3080 FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage V =30V(Min) DSS Static Drain-Source On-Resistance R = 28m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d... See More ⇒

 8.1. Size:203K  1
 2sk308.pdf

... See More ⇒

 8.2. Size:45K  1
 2sk3081.pdf

2SK3081 Silicon N Channel MOS FET High Speed Power Switching ADE-208-636A (Z) 3rd. Edition Jul. 1998 Features Low on-resistance RDS(on) = 10m typ. 4V gate drive devices. High speed switching Outline TO 220AB D G 1. Gate 1 2. Drain(Flange) 2 3. Source 3 S 2SK3081 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSS... See More ⇒

 8.3. Size:188K  toshiba
 2sk3089.pdf

2SK3089 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSVI) 2SK3089 Chopper Regulator DC-DC Converter, and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 25 m (typ.) High forward transfer admittance Yfs = 20 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 30 V) Enhancement mode Vth = 1.5 3.0 V (VDS = ... See More ⇒

 8.4. Size:138K  toshiba
 2sk3084.pdf

... See More ⇒

 8.5. Size:177K  toshiba
 2sk3085.pdf

2SK3085 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3085 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 1.7 (typ.) High forward transfer admittance Yfs = 3 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement mode Vth = 2.0 4.0 V (VDS... See More ⇒

 8.6. Size:108K  renesas
 rej03g1065 2sk3082lsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.7. Size:91K  renesas
 2sk3082s-l.pdf

2SK3082(L), 2SK3082(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1065-0300 (Previous ADE-208-637A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 0.055 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Package name L... See More ⇒

 8.8. Size:93K  renesas
 2sk3082stl.pdf

2SK3082(L), 2SK3082(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1065-0300 (Previous ADE-208-637A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 0.055 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Package name L... See More ⇒

 8.9. Size:94K  renesas
 2sk3082.pdf

2SK3082(L), 2SK3082(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1065-0300 (Previous ADE-208-637A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 0.055 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Package name L... See More ⇒

 8.10. Size:357K  inchange semiconductor
 2sk3082s.pdf

isc N-Channel MOSFET Transistor 2SK3082S FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 75m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒

 8.11. Size:283K  inchange semiconductor
 2sk3082l.pdf

isc N-Channel MOSFET Transistor 2SK3082L FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 75m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒

 8.12. Size:299K  inchange semiconductor
 2sk308.pdf

isc N-Channel MOSFET Transistor 2SK308 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 120V(Min) DSS Static Drain-Source On-Resistance R = 0.3 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒

 8.13. Size:283K  inchange semiconductor
 2sk3089k.pdf

isc N-Channel MOSFET Transistor 2SK3089K FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 30m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒

 8.14. Size:357K  inchange semiconductor
 2sk3089b.pdf

isc N-Channel MOSFET Transistor 2SK3089B FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 30m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒

 8.15. Size:289K  inchange semiconductor
 2sk3081.pdf

isc N-Channel MOSFET Transistor 2SK3081 FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V =30V(Min) DSS Static Drain-Source On-Resistance R = 14m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d... See More ⇒

 8.16. Size:289K  inchange semiconductor
 2sk3085.pdf

isc N-Channel MOSFET Transistor 2SK3085 FEATURES Drain Current I = 3.5A@ T =25 D C Drain Source Voltage V =600V(Min) DSS Static Drain-Source On-Resistance R = 2.2 (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒