BRCS025N04DP Specs and Replacement

Type Designator: BRCS025N04DP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 164 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 830 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm

Package: TO-252

BRCS025N04DP substitution

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BRCS025N04DP datasheet

 ..1. Size:1112K  blue-rocket-elect
 brcs025n04dp.pdf pdf_icon

BRCS025N04DP

BRCS025N04DP Rev.A Jul.-2022 DATA SHEET / Descriptions TO-252 N N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rss Low RDS(on),low gate charge, low Crss, fast switching, HF Product. / Applications DC/D... See More ⇒

 8.1. Size:2068K  blue-rocket-elect
 brcs020n06sra.pdf pdf_icon

BRCS025N04DP

BRCS020N06SRA Rev.A Feb.-2023 DATA SHEET / Descriptions TO-220 N N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , Ultra Low On-Resistance,fast switching. / Applications PFC These d... See More ⇒

 8.2. Size:1038K  blue-rocket-elect
 brcs020n04zc.pdf pdf_icon

BRCS025N04DP

BRCS020N04ZC Rev.A Mar.-2022 DATA SHEET / Descriptions PDFN5 6 N N-Channel MOSFET in a PDFN5 6 Plastic Package . / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance;H... See More ⇒

 8.3. Size:1908K  blue-rocket-elect
 brcs020n04ra.pdf pdf_icon

BRCS025N04DP

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Detailed specifications: BRCS016N03ZC, BRCS020N03RA, BRCS020N03ZC, BRCS020N04BD, BRCS020N04RA, BRCS020N04ZC, BRCS020N06SBD, BRCS020N06SRA, IRFZ44N, BRCS030N03DP, BRCS030N03ZC, BRCS030N04DP, BRCS030N06SBD, BRCS030N06SZC, BRCS030N10SHBD, BRCS030N10SHRA, BRCS035N03DP

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