BRCS030N03DP Specs and Replacement

Type Designator: BRCS030N03DP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 90 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 135 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.2 nS

Cossⓘ - Output Capacitance: 650 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: TO-252

BRCS030N03DP substitution

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BRCS030N03DP datasheet

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 brcs030n03dp.pdf pdf_icon

BRCS030N03DP

BRCS030N03DP Rev.A Jul.-2023 ATA SHEET / Descriptions TO-252 N MOS N-Channel Enhancement Mode Field Effect Transistor in a TO-252 Plastic Package. / Features V (V) = 30V I =135 A (V = 20V) DS D GS R DS(ON)@10V 3mR(Typ.2.3mR) R DS(ON)@4.5V 5mR(Typ.3.1mR) HF Product. / Applications ... See More ⇒

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 brcs030n03zc.pdf pdf_icon

BRCS030N03DP

BRCS030N03ZC Rev.C Sep.-2022 DATA SHEET / Descriptions PDFN5 6 N N-Channel MOSFET in a PDFN5 6 Plastic Package . / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance;H... See More ⇒

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 brcs030n06sbd.pdf pdf_icon

BRCS030N03DP

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BRCS030N03DP

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Detailed specifications: BRCS020N03RA, BRCS020N03ZC, BRCS020N04BD, BRCS020N04RA, BRCS020N04ZC, BRCS020N06SBD, BRCS020N06SRA, BRCS025N04DP, IRF3205, BRCS030N03ZC, BRCS030N04DP, BRCS030N06SBD, BRCS030N06SZC, BRCS030N10SHBD, BRCS030N10SHRA, BRCS035N03DP, BRCS035N03ZC

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