BRCS035N04SDP Specs and Replacement

Type Designator: BRCS035N04SDP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 118 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 136 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 740 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: TO-252

BRCS035N04SDP substitution

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BRCS035N04SDP datasheet

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BRCS035N04SDP

BRCS035N08SHBD Rev.A Feb.-2023 DATA SHEET / Descriptions TO-263 N N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features , Ultra Low On-Resistance,fast switching, HF Product. / Applications BMS BMS appliances, High power inve... See More ⇒

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Detailed specifications: BRCS030N03ZC, BRCS030N04DP, BRCS030N06SBD, BRCS030N06SZC, BRCS030N10SHBD, BRCS030N10SHRA, BRCS035N03DP, BRCS035N03ZC, IRF640, BRCS035N06SDP, BRCS035N06SZC, BRCS035N08SHBD, BRCS035N08SHRA, BRCS035N08SHZC, BRCS035N10SHBD, BRCS035N10SHZC, BRCS040N02DP

Keywords - BRCS035N04SDP MOSFET specs

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