BRCS035N04SDP Datasheet and Replacement
Type Designator: BRCS035N04SDP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 118 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 136 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 740 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: TO-252
- MOSFET Cross-Reference Search
BRCS035N04SDP Datasheet (PDF)
brcs035n04sdp.pdf

BRCS035N04SDP Rev.A Mar.-2023 DATA SHEET / Descriptions TO-252 N N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow R ,low gate charge, low C , fast switching, HF Product. DS(on) rss / Applications
brcs035n08shbd.pdf

BRCS035N08SHBD Rev.A Feb.-2023 DATA SHEET / Descriptions TO-263 N N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features , Ultra Low On-Resistance,fast switching, HF Product. / Applications BMS BMS appliances, High power inve
brcs035n06sdp.pdf

BRCS035N06SDP Rev.A Jan.-2022 DATA SHEET / Descriptions TO-252 N N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching, Halogen-free Product. / Applications
brcs035n03dp.pdf

BRCS035N03DP Rev.A Nov-2023 DATA SHEET / Descriptions TO-252 N MOS N-Channel Enhancement Mode Field Effect Transistor in a TO-252 Plastic Package. / Features V (V) = 30V I =122 A (V = 20V) DS D GS RDS(ON)@10V3.5mR(Typ.3.4mR) RDS(ON)@4.5V6.5mR(Typ.5.0mR) HF Product. / Applications
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: MTP8N50E | IPI80N06S2L-05 | BF989S | PJM2302NSA-S | FQB6N50 | AP15TN1R5N
Keywords - BRCS035N04SDP MOSFET datasheet
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History: MTP8N50E | IPI80N06S2L-05 | BF989S | PJM2302NSA-S | FQB6N50 | AP15TN1R5N



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