BRCS040N02DP Specs and Replacement
Type Designator: BRCS040N02DP
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 95 A
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 370 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: TO-252
BRCS040N02DP substitution
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BRCS040N02DP datasheet
brcs040n02dp.pdf
BRCS040N02DP Rev.A May.-2023 DATA SHEET / Descriptions TO-252 N N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features V (V) = 20V I =95A (V = 20V) DS D GS R DS(ON)@4.5V 4mR(Typ.3.7mR) R DS(ON)@2.5V 6mR(Typ.5.5mR) R DS(ON)@2.0V 15mR(Typ.8mR) HF Product. / Applications ... See More ⇒
brcs040n03dp.pdf
BRCS040N03DP Rev.A Dec. -2021 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features , , Low gate charge, low crss, fast switching,HF Product. / Applications DC/DC These devices a... See More ⇒
Detailed specifications: BRCS035N04SDP, BRCS035N06SDP, BRCS035N06SZC, BRCS035N08SHBD, BRCS035N08SHRA, BRCS035N08SHZC, BRCS035N10SHBD, BRCS035N10SHZC, IRF3710, BRCS040N03DP, BRCS045N08SHBD, BRCS045N08SHRA, BRCS045N10SHBD, BRCS045N10SHRA, BRCS050N03DP, BRCS050N03DSC, BRCS050N03YB
Keywords - BRCS040N02DP MOSFET specs
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History: BRCS035N10SHZC
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