BRCS060N03ZB Specs and Replacement

Type Designator: BRCS060N03ZB

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 29 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 790 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: PDFN3X3A-8L

BRCS060N03ZB substitution

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BRCS060N03ZB datasheet

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BRCS060N03ZB

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 3.1. Size:798K  blue-rocket-elect
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BRCS060N03ZB

BRCS060N03ZC Rev.B May.-2021 DATA SHEET / Descriptions PDFN5*6 N N-Channel MOSFET in a PDFN5*6 Plastic Package . / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance. / Applicat... See More ⇒

 4.1. Size:648K  blue-rocket-elect
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BRCS060N03ZB

BRCS060N03YB Rev.A Aug.-2021 DATA SHEET / Descriptions PDFN 3 3A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a PDFN 3 3A-8L Plastic Package. / Features VDS (V) = 30V ID =40 A (VGS = 20V) RDS(ON)@10V 6mR(Typ.4.7mR) HF Product. / Applications DC/DC ... See More ⇒

 4.2. Size:1227K  blue-rocket-elect
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BRCS060N03ZB

BRCS060N03DP Rev.A Jun.-2022 DATA SHEET / Descriptions TO-252 N MOS N-Channel Enhancement Mode Field Effect Transistor in a TO-252 Plastic Package. / Features VDS (V) = 30V ID =67A (VGS = 20V) RDS(ON)@10V 6mR HF Product. / Applications DC/DC , DC/DC C... See More ⇒

Detailed specifications: BRCS050N04BD, BRCS050N04RA, BRCS050N04YB, BRCS050N085HRA, BRCS055N08SHBD, BRCS055N08SHRA, BRCS060N03DP, BRCS060N03YB, AO3401, BRCS060N03ZC, BRCS060N04DP, BRCS060N04SZC, BRCS060N04YM, BRCS060N08HZC, BRCS060N15SHRA, BRCS065N08SHBD, BRCS065N08SHRA

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.