BRCS060N03ZB Datasheet and Replacement
Type Designator: BRCS060N03ZB
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 29 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 790 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: PDFN3X3A-8L
BRCS060N03ZB substitution
BRCS060N03ZB Datasheet (PDF)
brcs060n03zb.pdf

BRCS060N03ZB Rev.A Nov.-2020 DATA SHEET / Descriptions DFN 3*3A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN 3*3A-8L Plastic Package. / Features VDS (V) = 30V ID =40 A (VGS = 20V) RDS(ON)@10V6mR(Typ.4.7mR) HF Product. / Applications DC/DC
brcs060n03zc.pdf

BRCS060N03ZC Rev.B May.-2021 DATA SHEET / Descriptions PDFN5*6 N N-Channel MOSFET in a PDFN5*6 Plastic Package . / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance. / Applicat
brcs060n03yb.pdf

BRCS060N03YB Rev.A Aug.-2021 DATA SHEET / Descriptions PDFN 33A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a PDFN 33A-8L Plastic Package. / Features VDS (V) = 30V ID =40 A (VGS = 20V) RDS(ON)@10V6mR(Typ.4.7mR) HF Product. / Applications DC/DC
brcs060n03dp.pdf

BRCS060N03DP Rev.A Jun.-2022 DATA SHEET / Descriptions TO-252 N MOS N-Channel Enhancement Mode Field Effect Transistor in a TO-252 Plastic Package. / Features VDS (V) = 30V ID =67A (VGS = 20V) RDS(ON)@10V6mR HF Product. / Applications DC/DC , DC/DC C
Datasheet: BRCS050N04BD , BRCS050N04RA , BRCS050N04YB , BRCS050N085HRA , BRCS055N08SHBD , BRCS055N08SHRA , BRCS060N03DP , BRCS060N03YB , AO3400 , BRCS060N03ZC , BRCS060N04DP , BRCS060N04SZC , BRCS060N04YM , BRCS060N08HZC , BRCS060N15SHRA , BRCS065N08SHBD , BRCS065N08SHRA .
Keywords - BRCS060N03ZB MOSFET datasheet
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History: STT06L01 | AFP4637W



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