BRCS065N08SHBD Datasheet and Replacement
Type Designator: BRCS065N08SHBD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 156.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 115 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 1310 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TO-263
BRCS065N08SHBD substitution
BRCS065N08SHBD Datasheet (PDF)
brcs065n08shbd.pdf

BRCS065N08SHBD Rev.A Sep.-2022 DATA SHEET / Descriptions TO-263 N N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features ,, Ultra Low On-Resistance,fast switching,HF product. / Applications LED
brcs065n08shra.pdf

BRCS065N08SHRA Rev.A Sep.-2022 DATA SHEET / Descriptions TO-220 N N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , Ultra Low On-Resistance,fast switching. / Applications LED Boost converter
brcs065n08shzc.pdf

BRCS065N08SHZC Rev.A Dec.-2022 DATA SHEET / Descriptions PDFN56 N N-Channel MOSFET in a PDFN56 Plastic Package. / Features Low On-Resistance, fast switching,HF Product. / Applications Mobile phone fast charging, Brushless
brcs060n03zc.pdf

BRCS060N03ZC Rev.B May.-2021 DATA SHEET / Descriptions PDFN5*6 N N-Channel MOSFET in a PDFN5*6 Plastic Package . / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance. / Applicat
Datasheet: BRCS060N03YB , BRCS060N03ZB , BRCS060N03ZC , BRCS060N04DP , BRCS060N04SZC , BRCS060N04YM , BRCS060N08HZC , BRCS060N15SHRA , TK10A60D , BRCS065N08SHRA , BRCS065N08SHZC , BRCS070N03DP , BRCS070N03DSC , BRCS070N08SRA , BRCS070N08SZC , BRCS070N10SZC , BRCS070P03DP .
History: SI1021R | IGLD60R190D1 | BRCS060N03YB
Keywords - BRCS065N08SHBD MOSFET datasheet
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History: SI1021R | IGLD60R190D1 | BRCS060N03YB



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