BRCS080C03SC MOSFET. Datasheet pdf. Equivalent
Type Designator: BRCS080C03SC
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 3.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 11.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 40 nC
trⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 110 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: SOP-8
BRCS080C03SC Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BRCS080C03SC Datasheet (PDF)
brcs080c03sc.pdf
BRCS080C03SC Rev.A Aug.-2023 DATA SHEET / Descriptions SOP-8 Complementary Enhancement MOSFET in a SOP-8 Plastic Package. / Features N-channel P-channel V (V)=30V I =15.5A V (V)=-30V I =-11.5A DS D DS DR DS(ON)@-10V
brcs080c03ym.pdf
BRCS080C03YM Rev.B Feb.-2023 DATA SHEET / Descriptions PDFN56A MOS Complementary Enhancement MOSFET in a PDFN56A Plastic Package. / Features N-channel P-channel VDS(V)=30V VDS(V)=-30V ID=24A ID=-24A RDS(ON)
brcs080c03ya.pdf
BRCS080C03YA Rev.A Sep.-2023 DATA SHEET / Descriptions PDFN33-8L Complementary Enhancement MOSFET in a PDFN33-8L Plastic Package. / Features N-channel P-channel V (V)=30V I =37A V (V)=-30V I =-26A DS D DS DR DS(ON)@-10V
brcs080c04sc.pdf
BRCS080C04SC Rev.B Aug.-2023 DATA SHEET / Descriptions SOP-8 Complementary Enhancement MOSFET in a SOP-8 Plastic Package. / Features N-channel P-channel V (V)=40V I =15A V (V)=-40V I =-11A DS D DS DR DS(ON)@-10V
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
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MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F