BRCS080C03SC Datasheet and Replacement
Type Designator: BRCS080C03SC
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 3.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 110 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: SOP-8
BRCS080C03SC substitution
BRCS080C03SC Datasheet (PDF)
brcs080c03sc.pdf
BRCS080C03SC Rev.A Aug.-2023 DATA SHEET / Descriptions SOP-8 Complementary Enhancement MOSFET in a SOP-8 Plastic Package. / Features N-channel P-channel V (V)=30V I =15.5A V (V)=-30V I =-11.5A DS D DS DR DS(ON)@-10V
brcs080c03ym.pdf
BRCS080C03YM Rev.B Feb.-2023 DATA SHEET / Descriptions PDFN56A MOS Complementary Enhancement MOSFET in a PDFN56A Plastic Package. / Features N-channel P-channel VDS(V)=30V VDS(V)=-30V ID=24A ID=-24A RDS(ON)
brcs080c03ya.pdf
BRCS080C03YA Rev.A Sep.-2023 DATA SHEET / Descriptions PDFN33-8L Complementary Enhancement MOSFET in a PDFN33-8L Plastic Package. / Features N-channel P-channel V (V)=30V I =37A V (V)=-30V I =-26A DS D DS DR DS(ON)@-10V
brcs080c04sc.pdf
BRCS080C04SC Rev.B Aug.-2023 DATA SHEET / Descriptions SOP-8 Complementary Enhancement MOSFET in a SOP-8 Plastic Package. / Features N-channel P-channel V (V)=40V I =15A V (V)=-40V I =-11A DS D DS DR DS(ON)@-10V
Datasheet: BRCS070N03DP , BRCS070N03DSC , BRCS070N08SRA , BRCS070N08SZC , BRCS070N10SZC , BRCS070P03DP , BRCS070P03YB , BRCS070P03YM , STP80NF70 , BRCS080C03YA , BRCS080C03YM , BRCS080C04SC , BRCS080N02RA , BRCS080N02ZB , BRCS080N02ZJ , BRCS080N03DSC , BRCS080N03YB .
Keywords - BRCS080C03SC MOSFET datasheet
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