BRCS080N02ZB Datasheet and Replacement
Type Designator: BRCS080N02ZB
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 43 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7.2 nS
Cossⓘ - Output Capacitance: 1190 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: DFN3X3A-8L
BRCS080N02ZB substitution
BRCS080N02ZB Datasheet (PDF)
brcs080n02zb.pdf
BRCS080N02ZB Rev.C Dec.-2023 DATA SHEET / Descriptions DFN33A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN33A-8L Plastic Package. / Features V (V) = 20V I = 43A (V =12V) DS D GS RDS(ON)@10V10mR(Typ.8.0mR) RDS(ON)@4.5V11mR(Typ.9.5mR) RDS(ON)@2.5V16mR(Typ.14mR) HF Pr
brcs080n02zj.pdf
BRCS080N02ZJ Rev.C Dec.-2021 DATA SHEET / Descriptions DFN 2*2B-6L N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN 2*2B-6L Plastic Package. / Features VDS (V) = 20V ID = 8A (VGS = 12V) HF Product. / Applications DC/DC
brcs080n02ra.pdf
BRCS080N02RA Rev.A Feb.-2023 DATA SHEET / Descriptions TO-220 N N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , Ultra Low On-Resistance,fast switching. / Applications Power switching application,Load switching,Uninterruptible po
brcs080n03yb.pdf
BRCS080N03YB Rev.A Mar.-2022 DATA SHEET / Descriptions PDFN33A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a PDFN 33A-8L Plastic Package. / Features VDS (V) = 30V ID =30 A (VGS = 20V) RDS(ON)@10V9mR(Typ.8mR) HFProduct. / Applications DC/DC
Datasheet: BRCS070P03DP , BRCS070P03YB , BRCS070P03YM , BRCS080C03SC , BRCS080C03YA , BRCS080C03YM , BRCS080C04SC , BRCS080N02RA , 4N60 , BRCS080N02ZJ , BRCS080N03DSC , BRCS080N03YB , BRCS080N04SC , BRCS080N04SDP , BRCS080N04YB , BRCS080N04ZB , BRCS080N04ZC .
Keywords - BRCS080N02ZB MOSFET datasheet
BRCS080N02ZB cross reference
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BRCS080N02ZB replacement
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