BRCS080N02ZJ Specs and Replacement
Type Designator: BRCS080N02ZJ
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7.2 nS
Cossⓘ - Output Capacitance: 1190 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: DFN2X2B-6L
BRCS080N02ZJ substitution
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BRCS080N02ZJ datasheet
brcs080n02zb.pdf
BRCS080N02ZB Rev.C Dec.-2023 DATA SHEET / Descriptions DFN3 3A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN3 3A-8L Plastic Package. / Features V (V) = 20V I = 43A (V = 12V) DS D GS R DS(ON)@10V 10mR(Typ.8.0mR) R DS(ON)@4.5V 11mR(Typ.9.5mR) R DS(ON)@2.5V 16mR(Typ.14mR) HF Pr... See More ⇒
brcs080n02ra.pdf
BRCS080N02RA Rev.A Feb.-2023 DATA SHEET / Descriptions TO-220 N N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , Ultra Low On-Resistance,fast switching. / Applications Power switching application,Load switching,Uninterruptible po... See More ⇒
brcs080n03yb.pdf
BRCS080N03YB Rev.A Mar.-2022 DATA SHEET / Descriptions PDFN 3 3A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a PDFN 3 3A-8L Plastic Package. / Features VDS (V) = 30V ID =30 A (VGS = 20V) RDS(ON)@10V 9mR(Typ.8mR) HF Product. / Applications DC/DC ... See More ⇒
Detailed specifications: BRCS070P03YB, BRCS070P03YM, BRCS080C03SC, BRCS080C03YA, BRCS080C03YM, BRCS080C04SC, BRCS080N02RA, BRCS080N02ZB, IRFP250, BRCS080N03DSC, BRCS080N03YB, BRCS080N04SC, BRCS080N04SDP, BRCS080N04YB, BRCS080N04ZB, BRCS080N04ZC, BRCS080N10SHBD
Keywords - BRCS080N02ZJ MOSFET specs
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BRCS080N02ZJ replacement
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History: BRCS080N03DSC
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