BRCS100N03BD
MOSFET. Datasheet pdf. Equivalent
Type Designator: BRCS100N03BD
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 150
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 100
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 80
nC
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 310
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007
Ohm
Package:
TO-263
BRCS100N03BD
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BRCS100N03BD
Datasheet (PDF)
..1. Size:809K blue-rocket-elect
brcs100n03bd.pdf 
BRCS100N03BD Rev.B May.-2022 DATA SHEET / Descriptions TO-263 N MOS N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features ,, Low gate charge, low crss, fast switching,HF Product. / Applications DC/DC These devices ar
5.1. Size:856K blue-rocket-elect
brcs100n06bd.pdf
BRCS100N06BD Rev.A May.-2019 DATA SHEET / Descriptions N TO-263 N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficie
5.2. Size:1968K blue-rocket-elect
brcs100n06ra.pdf
BRCS100N06RA Rev.C Jul.-2018 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high effic
5.3. Size:857K blue-rocket-elect
brcs100n06dp.pdf
BRCS100N06DP Rev.B Sep.-2019 DATA SHEET / Descriptions N TO-252 N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ,, Low gate charge, low crss, fast switching. Halogen-free Product. / Applications DC/DC These devi
Datasheet: IRFP344
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, IRFP350FI
, IRFP350LC
, IRFP351
, IRFP352
, IRFP353
, 2SK3568
, IRFP360
, IRFP360LC
, IRFP3710
, IRFP430
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, IRFP432
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