BRCS100N06DP Datasheet and Replacement
Type Designator: BRCS100N06DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 295 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: TO-252
BRCS100N06DP substitution
BRCS100N06DP Datasheet (PDF)
brcs100n06dp.pdf

BRCS100N06DP Rev.B Sep.-2019 DATA SHEET / Descriptions N TO-252 N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ,, Low gate charge, low crss, fast switching. Halogen-free Product. / Applications DC/DC These devi
brcs100n06bd.pdf

BRCS100N06BD Rev.A May.-2019 DATA SHEET / Descriptions N TO-263 N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficie
brcs100n06ra.pdf

BRCS100N06RA Rev.C Jul.-2018 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high effic
brcs100n03bd.pdf

BRCS100N03BD Rev.B May.-2022 DATA SHEET / Descriptions TO-263 N MOS N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features ,, Low gate charge, low crss, fast switching,HF Product. / Applications DC/DC These devices ar
Datasheet: BRCS080N04ZB , BRCS080N04ZC , BRCS080N10SHBD , BRCS080N10SHDP , BRCS080N10SHRA , BRCS080N10SHZC , BRCS100N03BD , BRCS100N06BD , IRF830 , BRCS100N06RA , BRCS100N10SHZC , BRCS10N60AA , BRCS120N02LZJ , BRCS120N03DP , BRCS120N03YA , BRCS120N03YB , BRCS120N03ZB .
Keywords - BRCS100N06DP MOSFET datasheet
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History: SQS482ENW | SE30150A



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