BRCS120N06HA
MOSFET. Datasheet pdf. Equivalent
Type Designator: BRCS120N06HA
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 300
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 120
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 110
nC
trⓘ - Rise Time: 38
nS
Cossⓘ -
Output Capacitance: 1030
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008
Ohm
Package:
TO-247
BRCS120N06HA
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BRCS120N06HA
Datasheet (PDF)
..1. Size:1011K blue-rocket-elect
brcs120n06ha.pdf 
BRCS120N06HA Rev.A Nov.-2018 DATA SHEET / Descriptions TO-247 N N-CHANNEL MOSFET in a TO-247Plastic Package. / Features Low gate charge minimize switching loss and fast recovery body diode.HF Product. / Applications DC/DC
4.1. Size:1069K blue-rocket-elect
brcs120n06yb.pdf
BRCS120N06YB Rev.A Feb.-2022 DATA SHEET / Descriptions PDFN33A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a PDFN 33A-8L Plastic Package. / Features VDS (V) = 60V ID =24 A (VGS = 20V) RDS(ON)@10V13mR(Typ.11.5mR) HFProduct. / Applications DC/DC
4.2. Size:2103K blue-rocket-elect
brcs120n06sra.pdf
BRCS120N06SRA Rev.A Apr.-2023 DATA SHEET / Descriptions N TO-220 N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features R C DS(on) rssLow R ,low gate charge, low C , fast switching,HF Product. DS(on) rss / Applications
4.3. Size:1271K blue-rocket-elect
brcs120n06sym.pdf
BRCS120N06SYM Rev.A May.-2022 DATA SHEET / Descriptions PDFN56A N Dual N-CHANNEL MOSFET in a PDFN56A Plastic Package. / Features Dual N-Ch VDS(V)=60V ID=24.5A RDS(ON)
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