BRCS120P012ZJ MOSFET Datasheet: P-Ch, 12V, 8A. Full specification with pinout and replacement list

BRCS120P012ZJ Specs and Replacement

Type Designator: BRCS120P012ZJ

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 550 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: DFN2X2B-6L

BRCS120P012ZJ substitution

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BRCS120P012ZJ datasheet

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BRCS120P012ZJ Rev.B Dec.-2021 DATA SHEET / Descriptions DFN 2*2B-6L P MOS P-Channel Enhancement Mode Field Effect Transistor in a DFN 2*2B-6L Plastic Package. / Features VDS (V) = -12V ID = -8 A (VGS = 10V) HF Product. / Applications Power ... See More ⇒

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brcs120p012mc.pdf pdf_icon

BRCS120P012MC Rev.A Sep.-2020 DATA SHEET / Descriptions SOT23-3 P MOS P- CHANNEL MOSFET in a SOT23-3 Plastic Package. / Features VDS (V) = -12V ID = -6 A (VGS = 10V) HF Product. / Applications Power Management in Notebook computer, Portable Eq... See More ⇒

5.1. Size:1550K blue-rocket-elect
brcs120p04zc.pdf pdf_icon

BRCS120P04ZC Rev.A Jul.-2022 DATA SHEET / Descriptions PDFN5 6 P P-Channel MOSFET in a PDFN5 6 Plastic Package. / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance; H... See More ⇒

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