BRCS150N10SRA
MOSFET. Datasheet pdf. Equivalent
Type Designator: BRCS150N10SRA
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 150
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 46
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 32.5
nC
trⓘ - Rise Time: 3
nS
Cossⓘ -
Output Capacitance: 600
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025
Ohm
Package:
TO-220
BRCS150N10SRA
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BRCS150N10SRA
Datasheet (PDF)
..1. Size:1213K blue-rocket-elect
brcs150n10sra.pdf 
BRCS150N10SRA Rev.A Nov.-2021 DATA SHEET / Descriptions TO-220 N N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , Ultra Low On-Resistance,fast switching. / Applications PFC These d
3.1. Size:1720K blue-rocket-elect
brcs150n10sbd.pdf
BRCS150N10SBD Rev.A Jun.-2023 DATA SHEET / Descriptions TO-263 N N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features V =100V ; I =46A DS DRDSON@10V15m(Type.14.8m) RDSON@4.5V25m(Type.20.4m) HF Product. / Applications PFC
3.2. Size:1040K blue-rocket-elect
brcs150n10sdp.pdf
BRCS150N10SDP Rev.A Feb.-2022 DATA SHEET / Descriptions TO-252 N N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching, HF Product. / Applications DC/
3.3. Size:1031K blue-rocket-elect
brcs150n10szc.pdf
BRCS150N10SZC Rev.A Oct.-2021 DATA SHEET / Descriptions PDFN5*6 N N-Channel MOSFET in a PDFN5*6 Plastic Package . / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance. H
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