BRCS200P03YB Datasheet and Replacement
Type Designator: BRCS200P03YB
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 24 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 5.5 nS
Cossⓘ - Output Capacitance: 580 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: PDFN3X3A-8L
- MOSFET Cross-Reference Search
BRCS200P03YB Datasheet (PDF)
brcs200p03yb.pdf

BRCS200P03YB Rev.A May.-2022 DATA SHEET / Descriptions PDFN33A-8L P P-Channel MOSFET in a PDFN33A-8L Plastic Package . / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resi
brcs200p03dsc.pdf

BRCS200P03DSC Rev.A Mar.-2023 DATA SHEET / Descriptions SOP-8 P Dual P-CHANNEL MOSFET in a SOP-8 Plastic Package . / Features Dual P-CHANNEL VDS(V)=-30V ID=-7.1A RDS(ON)
brcs200p03zc.pdf

BRCS200P03ZC Rev.A May.-2022 DATA SHEET / Descriptions PDFN56 P P-Channel MOSFET in a PDFN56 Plastic Package. / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance;HF P
brcs200p03zb.pdf

BRCS200P03ZB Rev.A May.-2020 DATA SHEET / Descriptions DFN 33A-8L P MOS P-Channel Enhancement Mode Field Effect Transistor in a DFN 33A-8L Plastic Package. / Features VDS (V) = -30V ID = -19 A (VGS = -20V) HF Product. / Applications Power
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: SSG4510 | VS3817GA | SFB053N100C3 | FQU13N10 | SWMI4N65D | NTMFS4837NHT1G | BMS3003
Keywords - BRCS200P03YB MOSFET datasheet
BRCS200P03YB cross reference
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History: SSG4510 | VS3817GA | SFB053N100C3 | FQU13N10 | SWMI4N65D | NTMFS4837NHT1G | BMS3003



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