BRCS200P03YB Datasheet and Replacement
Type Designator: BRCS200P03YB
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5.5 nS
Cossⓘ - Output Capacitance: 580 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: PDFN3X3A-8L
BRCS200P03YB substitution
BRCS200P03YB Datasheet (PDF)
brcs200p03yb.pdf

BRCS200P03YB Rev.A May.-2022 DATA SHEET / Descriptions PDFN33A-8L P P-Channel MOSFET in a PDFN33A-8L Plastic Package . / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resi
brcs200p03dsc.pdf

BRCS200P03DSC Rev.A Mar.-2023 DATA SHEET / Descriptions SOP-8 P Dual P-CHANNEL MOSFET in a SOP-8 Plastic Package . / Features Dual P-CHANNEL VDS(V)=-30V ID=-7.1A RDS(ON)
brcs200p03zc.pdf

BRCS200P03ZC Rev.A May.-2022 DATA SHEET / Descriptions PDFN56 P P-Channel MOSFET in a PDFN56 Plastic Package. / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance;HF P
brcs200p03zb.pdf

BRCS200P03ZB Rev.A May.-2020 DATA SHEET / Descriptions DFN 33A-8L P MOS P-Channel Enhancement Mode Field Effect Transistor in a DFN 33A-8L Plastic Package. / Features VDS (V) = -30V ID = -19 A (VGS = -20V) HF Product. / Applications Power
Datasheet: BRCS200P012MC , BRCS200P012MF , BRCS200P012ZJ , BRCS200P02MC , BRCS200P02YA , BRCS200P02ZJ , BRCS200P03DP , BRCS200P03DSC , AO3400 , BRCS200P03ZB , BRCS200P03ZC , BRCS200P03ZJ , BRCS20N03IP , BRCS20N06DP , BRCS20N06IP , BRCS20P03IP , BRCS20P06IP .
History: 2SJ595 | JCS6N90FH | HMS28N65F | VBZE06N03 | SI8810
Keywords - BRCS200P03YB MOSFET datasheet
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History: 2SJ595 | JCS6N90FH | HMS28N65F | VBZE06N03 | SI8810



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