All MOSFET. BRCS250N03DMF Datasheet

 

BRCS250N03DMF Datasheet and Replacement


   Type Designator: BRCS250N03DMF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 5.5 A
   Qg ⓘ - Total Gate Charge: 5.2 nC
   tr ⓘ - Rise Time: 2.5 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm
   Package: SOT23-6
 

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BRCS250N03DMF Datasheet (PDF)

 ..1. Size:1365K  blue-rocket-elect
 brcs250n03dmf.pdf pdf_icon

BRCS250N03DMF

BRCS250N03DMF Rev.A Nov.-2021 DATA SHEET / Descriptions SOT23-6 N MOS Dual N-Channel MOSFET in a SOT23-6 Plastic Package. / Features Super high dense cell design for low R ,Rugged and reliable,HF product. DS(ON) / Applications

 3.1. Size:1393K  blue-rocket-elect
 brcs250n03dsc.pdf pdf_icon

BRCS250N03DMF

BRCS250N03DSC Rev.A Jun.-2023 DATA SHEET / Descriptions SOP-8 N MOS Double N-CHANNEL MOSFET in a SOP-8 Plastic Package. / Features V (V)=30V I =7.5A DS DRDS(ON)@10V

 4.1. Size:915K  blue-rocket-elect
 brcs250n03ya.pdf pdf_icon

BRCS250N03DMF

BRCS250N03YA Rev.A Feb.-2022 DATA SHEET / Descriptions PDFN33-8L N MOS DoubleN-CHANNELMOSFETinaPDFN33-8LPlasticPackage. / Features N-channel VDS(V)=30V ID=20A RDS(ON)

 6.1. Size:1129K  blue-rocket-elect
 brcs250n10syb.pdf pdf_icon

BRCS250N03DMF

BRCS250N10SYB Rev.A Jun.-2022 DATA SHEET / Descriptions PDFN 33A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a PDFN 33A-8L Plastic Package. / Features VDS (V) = 100V ID =22A (VGS = 20V) RDS(ON)@10V25mR(Typ.20mR) HF Product. / Applications DC/DC AC/DC

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Datasheet: BRCS2300MC , BRCS2301EMF , BRCS2303MA , BRCS2305MA , BRCS2321MA , BRCS2321MC , BRCS250C03MF , BRCS250C03YA , 4435 , BRCS250N03DSC , BRCS250N03YA , BRCS250N10SDP , BRCS250N10SIP , BRCS250N10SYB , BRCS25N60PH , BRCS26N50PA , BRCS26N50PH .

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