All MOSFET. BRCS500P10ZC Datasheet

 

BRCS500P10ZC Datasheet and Replacement


   Type Designator: BRCS500P10ZC
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 90 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 29 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 5.9 nC
   tr ⓘ - Rise Time: 2.4 nS
   Cossⓘ - Output Capacitance: 1350 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: PDFN5X6
 

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BRCS500P10ZC Datasheet (PDF)

 ..1. Size:2054K  blue-rocket-elect
 brcs500p10zc.pdf pdf_icon

BRCS500P10ZC

BRCS500P10ZC Rev.A Sep.-2023 DATA SHEET / Descriptions PDFN56 N MOS P-CHANNEL MOSFET in a PDFN56 Plastic Package. / Features VDS(V)=-100V I =-29A DRDS(ON)@-10V

 4.1. Size:2033K  blue-rocket-elect
 brcs500p10dp.pdf pdf_icon

BRCS500P10ZC

BRCS500P10DP Rev.A Aug.-2023 DATA SHEET / Descriptions TO-252 P MOS P-CHANNEL MOSFET in a TO-252 Plastic Package. / Features VDS(V)=-100V I =-28A DRDS(ON)@-10V

 8.1. Size:932K  blue-rocket-elect
 brcs50n06bd.pdf pdf_icon

BRCS500P10ZC

BRCS50N06BD Rev.A Sep.-2022 DATA SHEET / Descriptions N TO-263 N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features R C DS(on) rssLow R ,low gate charge, low C , fast switching, Trench Technologies, HF Product. DS(on) rss / Applications

 8.2. Size:906K  blue-rocket-elect
 brcs50n06ra.pdf pdf_icon

BRCS500P10ZC

BRCS50N06RA Rev.A Sep.-2020 DATA SHEET / Descriptions N TO-220 N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching, Trench Technologies. Halogen-free Product. / Applications

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Datasheet: BRCS4620SC , BRCS4800SC , BRCS4803SC , BRCS4828SC , BRCS4N10TA , BRCS4N65AA , BRCS4N80DP , BRCS500P10DP , 2N7002 , BRCS50N06BD , BRCS50N06DP , BRCS50N06IP , BRCS50N06RA , BRCS5N50YU , BRCS5P06MC , BRCS5P06MF , BRCS60N02DP .

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