All MOSFET. 2SK3082 Datasheet

 

2SK3082 Datasheet and Replacement


   Type Designator: 2SK3082
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: LDPAK
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2SK3082 Datasheet (PDF)

 ..1. Size:94K  renesas
2sk3082.pdf pdf_icon

2SK3082

2SK3082(L), 2SK3082(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1065-0300 (Previous: ADE-208-637A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 0.055 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B(Package name: L

 0.1. Size:108K  renesas
rej03g1065 2sk3082lsds.pdf pdf_icon

2SK3082

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.2. Size:91K  renesas
2sk3082s-l.pdf pdf_icon

2SK3082

2SK3082(L), 2SK3082(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1065-0300 (Previous: ADE-208-637A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 0.055 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B(Package name: L

 0.3. Size:93K  renesas
2sk3082stl.pdf pdf_icon

2SK3082

2SK3082(L), 2SK3082(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1065-0300 (Previous: ADE-208-637A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 0.055 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B(Package name: L

Datasheet: 2SK2978 , 2SK2979 , 2SK2980 , 2SK3000 , 2SK3069 , 2SK3070 , 2SK3080 , 2SK3081 , SKD502T , 2SK3133 , 2SK3134 , 2SK3135 , 2SK3136 , 2SK3140 , 2SK3141 , 2SK3142 , 2SK3147 .

History: 2N6800LCC4 | SI8802DB | 2SK2973 | 2SK3070L | SIB411DK | 2N7071 | SI9434BDY

Keywords - 2SK3082 MOSFET datasheet

 2SK3082 cross reference
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