BRD4N65S
MOSFET. Datasheet pdf. Equivalent
Type Designator: BRD4N65S
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 75
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 102
nC
trⓘ - Rise Time: 102
nS
Cossⓘ -
Output Capacitance: 44
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.7
Ohm
Package:
TO-252
BRD4N65S
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BRD4N65S
Datasheet (PDF)
..1. Size:981K blue-rocket-elect
brd4n65s.pdf 
BRD4N65S Rev.A Dec.-2023 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ,,, Low gate charge, low crss, fast switching,HF Product. Have good Electromagnetic Interference porfo
7.1. Size:438K blue-rocket-elect
brd4n65.pdf
BRD4N65 Rev.F Aug.-2017 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications These devices are well suited for po
8.1. Size:700K blue-rocket-elect
brd4n60.pdf
BRD4N60(BRCS4N60D) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high
9.1. Size:808K blue-rocket-elect
brd4n70.pdf
BRD4N70 Rev.E May.-2016 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications These devices are well suited for po
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