All MOSFET. BRD65R280C Datasheet

 

BRD65R280C Datasheet and Replacement


   Type Designator: BRD65R280C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 138 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 26 nC
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: TO-252
 

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BRD65R280C Datasheet (PDF)

 ..1. Size:1129K  blue-rocket-elect
 brd65r280c.pdf pdf_icon

BRD65R280C

BRD65R280C Rev.B May.-2022 DATA SHEET / Descriptions TO-252 N 650V N-CHANNEL 650V Super-Junction Power MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching, HF Product. / Applicatio

 8.1. Size:1063K  blue-rocket-elect
 brd65r1k0c.pdf pdf_icon

BRD65R280C

BRD65R1K0C Rev.B May.-2022 DATA SHEET / Descriptions TO-252 N 650V N-CHANNEL 650V Super-Junction Power MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching, HF Product. / Applicatio

 8.2. Size:1078K  blue-rocket-elect
 brd65r650c.pdf pdf_icon

BRD65R280C

BRD65R650C Rev.B May.-2022 DATA SHEET / Descriptions TO-252 N 650V N-CHANNEL 650V Super-Junction Power MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching, HF Product. / Applicatio

 8.3. Size:1893K  blue-rocket-elect
 brd65r600c.pdf pdf_icon

BRD65R280C

BRD65R600C Rev.A Dec.-2023 DATA SHEET / Descriptions TO-252 N 650V N-CHANNEL 650V Super-Junction Power MOSFET in a TO-252 Plastic Package. / Features R Qg100% ROHS DS(on)Very low R Qg,100% avalanche tested,RoHS compliant, HF Product. DS(on) / App

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Keywords - BRD65R280C MOSFET datasheet

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