BRD65R600C Datasheet and Replacement
Type Designator: BRD65R600C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 30 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO-252
BRD65R600C substitution
BRD65R600C Datasheet (PDF)
brd65r600c.pdf

BRD65R600C Rev.A Dec.-2023 DATA SHEET / Descriptions TO-252 N 650V N-CHANNEL 650V Super-Junction Power MOSFET in a TO-252 Plastic Package. / Features R Qg100% ROHS DS(on)Very low R Qg,100% avalanche tested,RoHS compliant, HF Product. DS(on) / App
brd65r650c.pdf

BRD65R650C Rev.B May.-2022 DATA SHEET / Descriptions TO-252 N 650V N-CHANNEL 650V Super-Junction Power MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching, HF Product. / Applicatio
brd65r1k0c.pdf

BRD65R1K0C Rev.B May.-2022 DATA SHEET / Descriptions TO-252 N 650V N-CHANNEL 650V Super-Junction Power MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching, HF Product. / Applicatio
brd65r380c.pdf

BRD65R380C Rev.B May.-2022 DATA SHEET / Descriptions TO-252 N 650V N-CHANNEL 650V Super-Junction Power MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching, HF Product. / Applicatio
Datasheet: BRCS9N20YU , BRD4N65S , BRD5N20 , BRD5N65 , BRD640 , BRD65R1K0C , BRD65R280C , BRD65R380C , IRFB4227 , BRD65R650C , BRD7002K1 , BRD7002K2 , BRD7N60 , BRD7N65 , BRD7N65S , BRF4N65S , BRF4N70 .
History: NCE1503S | STD65N55LF3 | BLF888A
Keywords - BRD65R600C MOSFET datasheet
BRD65R600C cross reference
BRD65R600C equivalent finder
BRD65R600C lookup
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BRD65R600C replacement
History: NCE1503S | STD65N55LF3 | BLF888A



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