BRD65R600C Datasheet and Replacement
Type Designator: BRD65R600C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 8.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 30 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO-252
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BRD65R600C Datasheet (PDF)
brd65r600c.pdf

BRD65R600C Rev.A Dec.-2023 DATA SHEET / Descriptions TO-252 N 650V N-CHANNEL 650V Super-Junction Power MOSFET in a TO-252 Plastic Package. / Features R Qg100% ROHS DS(on)Very low R Qg,100% avalanche tested,RoHS compliant, HF Product. DS(on) / App
brd65r650c.pdf

BRD65R650C Rev.B May.-2022 DATA SHEET / Descriptions TO-252 N 650V N-CHANNEL 650V Super-Junction Power MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching, HF Product. / Applicatio
brd65r1k0c.pdf

BRD65R1K0C Rev.B May.-2022 DATA SHEET / Descriptions TO-252 N 650V N-CHANNEL 650V Super-Junction Power MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching, HF Product. / Applicatio
brd65r380c.pdf

BRD65R380C Rev.B May.-2022 DATA SHEET / Descriptions TO-252 N 650V N-CHANNEL 650V Super-Junction Power MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching, HF Product. / Applicatio
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: HX2N60 | IPI47N10S-33 | FDMC8321LDC | IRF7523D1PBF | IRFZ48RS | IRHY9130CM | WSD30L30DN
Keywords - BRD65R600C MOSFET datasheet
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History: HX2N60 | IPI47N10S-33 | FDMC8321LDC | IRF7523D1PBF | IRFZ48RS | IRHY9130CM | WSD30L30DN



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