BRD7002K2 Datasheet and Replacement
Type Designator: BRD7002K2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.32 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5.8 nS
Cossⓘ - Output Capacitance: 11 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm
Package: SOT-363
BRD7002K2 substitution
BRD7002K2 Datasheet (PDF)
brd7002k2.pdf

BRD7002K2 Rev.J Jan.-2024 DATA SHEET / Descriptions SOT-363 N MOS Double N-CHANNEL MOSFET in a SOT-363 Plastic Package. / Features Sensitive gate trigger current and Low Holding current,ESD protected diode, HF Product.
brd7002k1.pdf

BRD7002K1 Rev.C Oct.-2021 DATA SHEET / Descriptions SOT-363 N MOS Double N-CHANNEL MOSFET in a SOT-363 Plastic Package. / Features Sensitive gate trigger current and Low Holding current.ESD protected diode. HF product.
brd70n08.pdf

BRD70N08 Rev.D May.-2016 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficienc
brd70n03.pdf

BRD70N03 Rev.E Dec.-2017 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features Super high dense cell design for low RDS(on),Rugged and reliable,surface mount package. / Applications DC/
Datasheet: BRD5N65 , BRD640 , BRD65R1K0C , BRD65R280C , BRD65R380C , BRD65R600C , BRD65R650C , BRD7002K1 , 7N65 , BRD7N60 , BRD7N65 , BRD7N65S , BRF4N65S , BRF4N70 , BRF5N50 , BRF60R580C , BRF65R280C .
History: SI4048DY | PJW7N06A | IPA50R299CP | DMN2075U | MSAFX76N07A | APT50M75LFLLG | MSAFA75N10C
Keywords - BRD7002K2 MOSFET datasheet
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History: SI4048DY | PJW7N06A | IPA50R299CP | DMN2075U | MSAFX76N07A | APT50M75LFLLG | MSAFA75N10C



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