All MOSFET. FQD30N06 Datasheet

 

FQD30N06 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FQD30N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 44 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 22.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 19 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: TO252 DPAK

 FQD30N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQD30N06 Datasheet (PDF)

 ..1. Size:1357K  onsemi
 fqd30n06.pdf

FQD30N06 FQD30N06

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..2. Size:774K  cn vbsemi
 fqd30n06.pdf

FQD30N06 FQD30N06

FQD30N06www.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise no

 0.1. Size:734K  fairchild semi
 fqd30n06tf fqd30n06tm.pdf

FQD30N06 FQD30N06

January 2009QFETFQD30N06 / FQU30N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 22.7A, 60V, RDS(on) = 0.045 @ VGS = 10Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 40 pF)This advanced technology has been especial

 0.2. Size:734K  fairchild semi
 fqd30n06ltf fqd30n06ltm fqu30n06ltu.pdf

FQD30N06 FQD30N06

January 2009QFETFQD30N06L / FQU30N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 24A, 60V, RDS(on) = 0.039 @ VGS = 10Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 50 pF)This advanced technology has been es

 0.3. Size:734K  fairchild semi
 fqd30n06l fqu30n06l.pdf

FQD30N06 FQD30N06

January 2009QFETFQD30N06L / FQU30N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 24A, 60V, RDS(on) = 0.039 @ VGS = 10Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 50 pF)This advanced technology has been es

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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