BRFL65R160C
MOSFET. Datasheet pdf. Equivalent
Type Designator: BRFL65R160C
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 34
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 20
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 41
nC
trⓘ - Rise Time: 13
nS
Cossⓘ -
Output Capacitance: 225
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.16
Ohm
Package:
TO-220FL
BRFL65R160C
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BRFL65R160C
Datasheet (PDF)
..1. Size:1706K blue-rocket-elect
brfl65r160c.pdf 
BRFL65R160C Rev.E Nov.-2017 DATA SHEET / Descriptions TO-220FL N 650V N-CHANNEL 650V Super-Junction Power MOSFET in a TO-220FL Plastic Package. / Features R Q 100% ROHS DS(on) gVery low RDS(on)Qg,100% avalanche tested, RoHS compliant. / Applications
7.1. Size:2472K blue-rocket-elect
brfl65r380c.pdf
BRFL65R380C Rev.A Jul.-2023 DATA SHEET / Descriptions TO-220FL N 650V N-CHANNEL 650V Super-Junction Power MOSFET in a TO-220FL Plastic Package. / Features R Qg100% ROHS DS(on)Very low R Qg,100% avalanche tested,RoHS compliant. DS(on) / Applications
9.1. Size:2144K blue-rocket-elect
brfl60r190c.pdf
BRFL60R190C Rev.A Feb.-2023 DATA SHEET / Descriptions TO-220FL N 600V N-CHANNEL 600V Super-Junction Power MOSFET in a TO-220FL Plastic Package. / Features R Qg100% ROHS DS(on)Very low R Qg,100%avalanche tested,RoHS compliant,with
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