RU20P3C Specs and Replacement
Type Designator: RU20P3C
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 46 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: SOT23
RU20P3C substitution
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RU20P3C datasheet
ru20p3c.pdf
RU20P3C P-Channel Advanced Power MOSFET Features Pin Description -20V/-3A, RDS (ON) =110m (Typ.)@VGS=-4.5V D RDS (ON) =150m (Typ.)@VGS=-2.5V Uses Ruichips Proprietary New TrenchTM Technology Ultra Low On-Resistance E ti l d /dt bilit Exceptional dv/dt capability Low Gate Charge Minimize Switching Loss G Lead Free and Green Devices (RoHS Compliant) S SO... See More ⇒
ru20p3b.pdf
RU20P3B P-Channel Advanced Power MOSFET MOSFET Features Pin Description -20V/-3A, RDS (ON) =80m (Typ.) @ VGS=-4.5V RDS (ON) =110m (Typ.) @ VGS=-2.5V Low RDS (ON) Super High Dense Cell Design Reliable and Rugged SOT-23 Lead Free and Green Available Applications Power Management Load Switch P-Channel MOSFET Absolute Maximum Ratings Symbol Parame... See More ⇒
ru20p7c.pdf
RU20P7C P-Channel Advanced Power MOSFET Features Pin Description -20V/-5A, RDS (ON) =20m (Typ.)@VGS=-4.5V D RDS (ON) =30m (Typ.)@VGS=-2.5V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G S SOT23-3 D D D D D D D Applications pp Load Switch ... See More ⇒
Detailed specifications: RU15P12C, RU17P12C, RU17P6C, RU18N65P, RU205C, RU2060L, RU20N65P, RU20N65R, SI2302, RU2N65P, RU30110M, RU30120M3, RU30180M-C, RU3030M3, RU3040M3, RU3070M3, RU30C20M3
Keywords - RU20P3C MOSFET specs
RU20P3C cross reference
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RU20P3C substitution
RU20P3C replacement
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History: BRFL60R190C | 2SK1272 | SSW50R140S | 2SK1288 | STW75NF30 | RU2060L | HCI70R360
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