FQD3P50TMF085 Datasheet. Specs and Replacement

Type Designator: FQD3P50TMF085  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.9 Ohm

Package: TO252 DPAK

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FQD3P50TMF085 datasheet

 5.1. Size:761K  fairchild semi
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FQD3P50TMF085

January 2009 QFET FQD3P50 / FQU3P50 500V P-Channel MOSFET Features General Description -2.1A, -500V, RDS(on) = 4.9 @VGS = -10 V These P-Channel enhancement mode power field effect Low gate charge ( typical 18 nC) transistors are produced using Fairchild s proprietary, Low Crss ( typical 9.5 pF) planar stripe, DMOS technology. This advanced technology has been espe... See More ⇒

 5.2. Size:1089K  fairchild semi
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FQD3P50TMF085

November 2010 FQD3P50TM_F085 500V P-Channel MOSFET Features General Description -2.1A, -500V, RDS(on) = 4.9 @VGS = -10 V These P-Channel enhancement mode power field effect Low gate charge ( typical 18 nC) transistors are produced using Fairchild s proprietary, Low Crss ( typical 9.5 pF) planar stripe, DMOS technology. This advanced technology has been especially tai... See More ⇒

 7.1. Size:598K  onsemi
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FQD3P50TMF085

FQD3P50 P-Channel QFET MOSFET - 500 V, - 2.1 A, 4.9 Features - 2.1 A, - 500 V, RDS(on) = 4.9 (Max.) @ VGS = - 10 V, Description ID = - 1.05 A This P-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 18 nC) produced using ON Semiconductor s proprietary Low Crss (Typ. 9.5 pF) planar stripe and DMOS technology. This advanced MOSFET technology has... See More ⇒

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Detailed specifications: FQD2N80, FQP4N20L, FQD2N90, FQD2P40, FQD30N06, FQD3N60CTMWS, FQB9P25, FQD3P50, 75N75, FQD4N20, FQP11P06, FQD4N25, FQD4P25, FQD5N20L, FQP12P10, FQD5N60C, FDS4675

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