All MOSFET. RU3070M3 Datasheet

 

RU3070M3 Datasheet and Replacement


   Type Designator: RU3070M3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 580 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: DFN3030
 

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RU3070M3 Datasheet (PDF)

 ..1. Size:722K  ruichips
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RU3070M3

RU3070M3N-Channel Advanced Power MOSFETFeatures Pin Description 30V/70AGRDS (ON) =3m(Typ.)@VGS=10VSSSRDS (ON) =3.6m(Typ.)@VGS=4.5V Uses Ruichips advanced TrenchTM technologyDD Excellent Q xR product(FOM) Excellent QgxRDS(on) product(FOM)DDD 100% avalanche tested Qualified according to JEDEC criteria Lead Free and Green Device Avai

 7.1. Size:307K  ruichips
ru3070m.pdf pdf_icon

RU3070M3

RU3070M N-Channel Advanced Power MOSFET Features Pin Description 30V/70A, RDS (ON) =3.8m(Typ.)@VGS=10V RDS (ON) =5m(Typ.)@VGS=4.5V Super High Dense Cell Design Reliable and Rugged 100% avalanche tested PDFN5060 Lead Free and Green Devices Available (RoHS Compliant) Applications DC/DC Conversion Switching Application N-Channel MOSF

 8.1. Size:328K  ruichips
ru3070l.pdf pdf_icon

RU3070M3

RU3070LN-Channel Advanced Power MOSFETFeatures Pin Description 30V/70A,D RDS (ON) =3.3m(Typ.)@VGS=10V RDS (ON) =5m(Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)GSTO252DApplications Load SwitchGSN-Channel MOSFETAbsolute Maximum Ratings

Datasheet: RU20N65R , RU20P3C , RU2N65P , RU30110M , RU30120M3 , RU30180M-C , RU3030M3 , RU3040M3 , AON6380 , RU30C20M3 , RU30C30M , RU30C40M3 , RU30J30M3 , RU30L30M3 , RU30L40M3 , RU30L40M-C , RU30P40M3 .

History: RU4089R | IRF7324PBF-1

Keywords - RU3070M3 MOSFET datasheet

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