FQP11P06 Datasheet and Replacement. Cross Reference Search

FQP11P06 Datasheet (PDF)

..1. Size:926K fairchild semi
fqp11p06.pdf pdf_icon

November 2013FQP11P06P-Channel QFET MOSFET-60 V, -11.4 A, 175 m Description FeaturesThese P-Channel enhancement mode power field effect -11.4 A, -60 V, RDS(on) = 175 m (Max.) @ VGS = -10 V,transistors are produced using Fairchild s proprietary, ID = -5.7 Aplanar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 13 nC)technology has been especially ta

9.1. Size:1291K fairchild semi
fqp11n50cf fqp11n50cf fqpf11n50cf.pdf pdf_icon

July 2005TMFRFETFQP11N50CF/FQPF11N50CF500V N-Channel MOSFETFeatures Description 11A, 500V, RDS(on) = 0.55 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge (typical 43 nC)DMOS technology. Low Crss (typical 20pF)This advanced technology has been especially tai

9.2. Size:1216K fairchild semi
fqp11n40c fqpf11n40c.pdf pdf_icon

May 2008 QFETFQP11N40C/FQPF11N40C 400V N-Channel MOSFETFeatures Description 10.5 A, 400V, RDS(on) = 0.5 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 28 nC)DMOS technology. Low Crss ( typical 85pF)This advanced technology has been especially

9.3. Size:699K fairchild semi
fqp11n40.pdf pdf_icon

April 2000TMQFETQFETQFETQFET 400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 11.4A, 400V, RDS(on) = 0.48 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has bee

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .