FQP11P06 Datasheet. Specs and Replacement

Type Designator: FQP11P06  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 53 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 11.4 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.175 Ohm

Package: TO220

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FQP11P06 substitution

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FQP11P06 datasheet

 ..1. Size:926K  fairchild semi
 fqp11p06.pdf pdf_icon

FQP11P06

November 2013 FQP11P06 P-Channel QFET MOSFET -60 V, -11.4 A, 175 m Description Features These P-Channel enhancement mode power field effect -11.4 A, -60 V, RDS(on) = 175 m (Max.) @ VGS = -10 V, transistors are produced using Fairchild s proprietary, ID = -5.7 A planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 13 nC) technology has been especially ta... See More ⇒

 9.1. Size:1291K  fairchild semi
 fqp11n50cf fqp11n50cf fqpf11n50cf.pdf pdf_icon

FQP11P06

July 2005 TM FRFET FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET Features Description 11A, 500V, RDS(on) = 0.55 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low Gate Charge (typical 43 nC) DMOS technology. Low Crss (typical 20pF) This advanced technology has been especially tai... See More ⇒

 9.2. Size:1216K  fairchild semi
 fqp11n40c fqpf11n40c.pdf pdf_icon

FQP11P06

May 2008 QFET FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Features Description 10.5 A, 400V, RDS(on) = 0.5 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 28 nC) DMOS technology. Low Crss ( typical 85pF) This advanced technology has been especially... See More ⇒

 9.3. Size:699K  fairchild semi
 fqp11n40.pdf pdf_icon

FQP11P06

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 11.4A, 400V, RDS(on) = 0.48 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has bee... See More ⇒

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Detailed specifications: FQD2N90, FQD2P40, FQD30N06, FQD3N60CTMWS, FQB9P25, FQD3P50, FQD3P50TMF085, FQD4N20, IRFB31N20D, FQD4N25, FQD4P25, FQD5N20L, FQP12P10, FQD5N60C, FDS4675, FQD5P10, FQD5P20

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