All MOSFET. RUH120N140T Datasheet

 

RUH120N140T MOSFET. Datasheet pdf. Equivalent


   Type Designator: RUH120N140T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 238 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 140 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 160 nC
   trⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 610 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: TOLL

 RUH120N140T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RUH120N140T Datasheet (PDF)

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