RUH120N35M3
MOSFET. Datasheet pdf. Equivalent
Type Designator: RUH120N35M3
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 78
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 35
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 18
nC
trⓘ - Rise Time: 29
nS
Cossⓘ -
Output Capacitance: 83
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035
Ohm
Package: DFN3030
RUH120N35M3
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RUH120N35M3
Datasheet (PDF)
..1. Size:225K ruichips
ruh120n35m3.pdf 
RUH120N35M3N-Channel Advanced Power MOSFETFeatures Pin Description 120V/35A,RDS (ON) =30m(Typ.)@VGS=10V Using Ruichips Advanced RUISGTTM Technology Ultra Low On-ResistanceG Excellent Qg&RDS(on) PerformanceSS Low Gate Charge Minimizing Switching LossS 100% Avalanche Tested Lead Free and Green Devices (RoHS Compliant)DDDDPIN1DFN3030D
5.1. Size:255K ruichips
ruh120n35l.pdf
RUH120N35LN-Channel Advanced Power MOSFETFeatures Pin Description 120V/35A,D RDS (ON) =28m(Typ.)@VGS=10V Using Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance Excellent Qg&RDS(on) Performance 100% Avalanche Tested Fast Switching Speed Lead Free and Green Devices (RoHS Compliant)GSTO252DApplications Atomizer Switch S
7.1. Size:325K ruichips
ruh120n140s.pdf
RUH120N140SN-Channel Advanced Power MOSFETFeatures Pin Description 120V/140A,DRDS (ON) =3.4m(Typ.)@VGS=10VRDS (ON) =3.7m(Typ.)@VGS=4.5V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent QgxRDS(on) ProductE ll t Q R P d t 100% avalanche tested 175C Operating TemperatureG Lead Free and Green Devices Available (RoH
7.2. Size:372K ruichips
ruh120n70r.pdf
RUH120N70RN-Channel Advanced Power MOSFETFeatures Pin Description 120V/70A,RDS (ON) =15m(Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% avalanche tested100% l h t t d 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)GDSTO220DDDDD
7.3. Size:266K ruichips
ruh120n81l.pdf
RUH120N81LN-Channel Advanced Power MOSFETFeatures Pin Description 120V/80A,D RDS (ON) =9.5m(Typ.)@VGS=10V RDS (ON) =11m(Typ.)@VGS=4.5V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent Qg&RDS(on) Performance Low Gate Charge Minimizing Switching Loss 100% Avalanche TestedG Lead Free and Green Devices (RoHS Compliant)
7.4. Size:381K ruichips
ruh120n140r.pdf
RUH120N140RN-Channel Advanced Power MOSFETFeatures Pin Description 120V/140A,RDS (ON) =3.6m(Typ.)@VGS=10VRDS (ON) =3.8m(Typ.)@VGS=4.5V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent QgxRDS( ) Product Excellent QgxRDS(on) Product 100% avalanche tested 175C Operating Temperature Lead Free and Green Devices Avail
7.5. Size:260K ruichips
ruh120n140t.pdf
RUH120N140TN-Channel Advanced Power MOSFETFeatures Pin Description 120V/140A,11RDS (ON) =3.4m(Typ.)@VGS=10V910RDS (ON) =4m(Typ.)@VGS=4.5V109 Using Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance1111 Excellent Qg&RDS(on) PerformanceE ll t Q &R P f2 834 76 Low Gate Charge Minimizing Switching Loss56 54 100% Avalanch
7.6. Size:229K ruichips
ruh120n90m.pdf
RUH120N90MN-Channel Advanced Power MOSFETFeatures Pin Description 120V/90A,RDS (ON) =6.2m(Typ.)@VGS=10VDRDS (ON) =7m(Typ.)@VGS=4.5VDD Ultra Low On-ResistanceD Fast Switching Speed 100% Avalanche TestedG Uses Ruichips advanced RUISGTTM technologySS Lead Free and Green Devices (RoHS Compliant)SPIN1DFN5060DApplications Synchr
7.7. Size:372K ruichips
ruh120n90r.pdf
RUH120N90RN-Channel Advanced Power MOSFETFeatures Pin Description 120V/90A,RDS (ON) =6.5m(Typ.)@VGS=10VRDS (ON) =7.5m(Typ.)@VGS=4.5V Using Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance Excellent Qg&RDS(on) PerformanceE ll t Q &R P f 100% Avalanche Tested 175C Operating Temperature Lead Free and Green Devices (RoHS Compliant)
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