RUH120N90R MOSFET. Datasheet pdf. Equivalent
Type Designator: RUH120N90R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 278 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 90 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 77 nC
trⓘ - Rise Time: 42 nS
Cossⓘ - Output Capacitance: 303 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TO220
RUH120N90R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RUH120N90R Datasheet (PDF)
ruh120n90r.pdf
RUH120N90RN-Channel Advanced Power MOSFETFeatures Pin Description 120V/90A,RDS (ON) =6.5m(Typ.)@VGS=10VRDS (ON) =7.5m(Typ.)@VGS=4.5V Using Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance Excellent Qg&RDS(on) PerformanceE ll t Q &R P f 100% Avalanche Tested 175C Operating Temperature Lead Free and Green Devices (RoHS Compliant)
ruh120n90m.pdf
RUH120N90MN-Channel Advanced Power MOSFETFeatures Pin Description 120V/90A,RDS (ON) =6.2m(Typ.)@VGS=10VDRDS (ON) =7m(Typ.)@VGS=4.5VDD Ultra Low On-ResistanceD Fast Switching Speed 100% Avalanche TestedG Uses Ruichips advanced RUISGTTM technologySS Lead Free and Green Devices (RoHS Compliant)SPIN1DFN5060DApplications Synchr
ruh120n35l.pdf
RUH120N35LN-Channel Advanced Power MOSFETFeatures Pin Description 120V/35A,D RDS (ON) =28m(Typ.)@VGS=10V Using Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance Excellent Qg&RDS(on) Performance 100% Avalanche Tested Fast Switching Speed Lead Free and Green Devices (RoHS Compliant)GSTO252DApplications Atomizer Switch S
ruh120n140s.pdf
RUH120N140SN-Channel Advanced Power MOSFETFeatures Pin Description 120V/140A,DRDS (ON) =3.4m(Typ.)@VGS=10VRDS (ON) =3.7m(Typ.)@VGS=4.5V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent QgxRDS(on) ProductE ll t Q R P d t 100% avalanche tested 175C Operating TemperatureG Lead Free and Green Devices Available (RoH
ruh120n70r.pdf
RUH120N70RN-Channel Advanced Power MOSFETFeatures Pin Description 120V/70A,RDS (ON) =15m(Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% avalanche tested100% l h t t d 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)GDSTO220DDDDD
ruh120n81l.pdf
RUH120N81LN-Channel Advanced Power MOSFETFeatures Pin Description 120V/80A,D RDS (ON) =9.5m(Typ.)@VGS=10V RDS (ON) =11m(Typ.)@VGS=4.5V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent Qg&RDS(on) Performance Low Gate Charge Minimizing Switching Loss 100% Avalanche TestedG Lead Free and Green Devices (RoHS Compliant)
ruh120n140r.pdf
RUH120N140RN-Channel Advanced Power MOSFETFeatures Pin Description 120V/140A,RDS (ON) =3.6m(Typ.)@VGS=10VRDS (ON) =3.8m(Typ.)@VGS=4.5V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent QgxRDS( ) Product Excellent QgxRDS(on) Product 100% avalanche tested 175C Operating Temperature Lead Free and Green Devices Avail
ruh120n140t.pdf
RUH120N140TN-Channel Advanced Power MOSFETFeatures Pin Description 120V/140A,11RDS (ON) =3.4m(Typ.)@VGS=10V910RDS (ON) =4m(Typ.)@VGS=4.5V109 Using Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance1111 Excellent Qg&RDS(on) PerformanceE ll t Q &R P f2 834 76 Low Gate Charge Minimizing Switching Loss56 54 100% Avalanch
ruh120n35m3.pdf
RUH120N35M3N-Channel Advanced Power MOSFETFeatures Pin Description 120V/35A,RDS (ON) =30m(Typ.)@VGS=10V Using Ruichips Advanced RUISGTTM Technology Ultra Low On-ResistanceG Excellent Qg&RDS(on) PerformanceSS Low Gate Charge Minimizing Switching LossS 100% Avalanche Tested Lead Free and Green Devices (RoHS Compliant)DDDDPIN1DFN3030D
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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