FQD4P25 Datasheet and Replacement

December 2000TMQFETQFETQFETQFETFQD4P25 / FQU4P25250V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -3.1A, -250V, RDS(on) = 2.1 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 10.3 pF)This advanced techn

December 2000TMQFETQFETQFETQFETFQD4P25 / FQU4P25250V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -3.1A, -250V, RDS(on) = 2.1 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 10.3 pF)This advanced techn

November 2013FQD4P25TM_WSP-Channel QFET MOSFET-250 V, -3.1 A, 2.1 Description FeaturesThis P-Channel enhancement mode power MOSFET is -3.1 A, -250 V, RDS(on) = 2.1 (Max.) @ VGS = 10 V,produced using Fairchild Semiconductors proprietary planar ID = -1.55 Astripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 10 nC)technology has been especi

FQD4P25TM-WSP-Channel QFET MOSFET-250 V, -3.1 A, 2.1 Features -3.1 A, -250 V, RDS(on) = 2.1 (Max.) @ VGS = 10 V,DescriptionID = -1.55 AThis P-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 10 nC)produced using ON Semiconductor Semiconductors Low Crss (Typ. 10.3 pF)proprietary planar stripe and DMOS technology. This advanced MOSFET t

November 2013FQD4P40P-Channel QFET MOSFET-400 V, -2.7 A, 3.1 Description FeaturesThese P-Channel enhancement mode power field effect -2.7 A, -400 V, RDS(on) = 3.1 (Max.) @ VGS = -10 V,ID = -1.35 Atransistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 18 nC)technology has been especially t

January 2009QFETFQD4P40 / FQU4P40 400V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -2.7A, -400V, RDS(on) = 3.1 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 18 nC)planar stripe, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has been especia

FQD4P40P-Channel QFET MOSFET-400 V, -2.7 A, 3.1 Features -2.7 A, -400 V, RDS(on) = 3.1 (Max.) @ VGS = -10 V,ID = -1.35 ADescription Low Gate Charge (Typ. 18 nC)These P-Channel enhancement mode power field effect Low Crss (Typ. 11 pF)transistors are produced using ON Semiconductors 100% Avalanche Testedproprietary, planar stripe, DMOS technology.