RUH3030M3 MOSFET. Datasheet pdf. Equivalent

   Type Designator: RUH3030M3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 29 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: DFN3030

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RUH3030M3 Datasheet (PDF)

..1. Size:562K ruichips
ruh3030m3.pdf pdf_icon

RUH3030M3N-Channel Advanced Power MOSFETFeatures Pin Description 30V/30A,RDS (ON) =5m(Typ.)@VGS=10VDDRDS (ON) =8.5m(Typ.)@VGS=4.5VDD Ultra Low On-Resistance Uses Ruichips advanced RUISGTTM technology 100% avalanche testedSG Lead Free and Green Devices Available (RoHS Compliant) SSPIN1PIN1DFN3030DApplications DC/DC Converters

9.1. Size:384K ruichips
ruh30150m.pdf pdf_icon

RUH30150MN-Channel Advanced Power MOSFETFeatures Pin Description 30V/150A,RDS (ON) =0.9m(Typ.)@VGS=10V DDDDRDS (ON) =1.4m(Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche testedG Lead Free and Green Devices Available (RoHS Compliant)SSSPIN1PIN1PDFN5060DApplications DC/DC Converters On board power

9.2. Size:286K ruichips
ruh30j105m.pdf pdf_icon

RUH30J105MDual Asymmetric N-Channel MOSFETFeatures Pin Description Die 1 30V/30ARDS (ON) =6m(Typ.)@VGS=10VRDS (ON) =9m(Typ.)@VGS=4.5V Die 2 30V/120ARDS (ON) =2.2m(Typ.)@VGS=10VRDS (ON) =3.0m(Typ.)@VGS=4.5V Ultra Low On-Resistance Uses Ruichips advanced SGT technology 100% avalanche testedPIN1 Lead Free and Green Devices Available (RoHS Com

9.3. Size:286K ruichips
ruh30j85m.pdf pdf_icon

RUH30J85MDual Asymmetric N-Channel MOSFETFeatures Pin Description Die 1 30V/30ARDS (ON) =6m(Typ.)@VGS=10VRDS (ON) =9m(Typ.)@VGS=4.5V Die 2 30V/90ARDS (ON) =3.5m(Typ.)@VGS=10VRDS (ON) =5m(Typ.)@VGS=4.5V Ultra Low On-Resistance Uses Ruichips advanced SGT technology 100% avalanche testedPIN1 Lead Free and Green Devices Available (RoHS Complia

9.4. Size:457K ruichips
ruh3051m.pdf pdf_icon

RUH3051MN-Channel Advanced Power MOSFETFeatures Pin Description 30V/50A,RDS (ON) =5m(Typ.)@VGS=10VDRDS (ON) =7.5m(Typ.)@VGS=4.5VDDD Ultra Low On-Resistance Fast Switching Speed 100% avalanche testedGS Lead Free and Green Devices Available (RoHS Compliant)SSPIN1DFN5060DApplications DC/DC Converters On board power for server

9.5. Size:286K ruichips
ruh30j95m.pdf pdf_icon

RUH30J95MDual Asymmetric N-Channel MOSFETFeatures Pin Description Die 1 30V/30ARDS (ON) =6m(Typ.)@VGS=10VRDS (ON) =9m(Typ.)@VGS=4.5V Die 2 30V/90ARDS (ON) =2.8m(Typ.)@VGS=10VRDS (ON) =4.2m(Typ.)@VGS=4.5V Ultra Low On-Resistance Uses Ruichips advanced SGT technology 100% avalanche testedPIN1 Lead Free and Green Devices Available (RoHS Compl

9.6. Size:385K ruichips
ruh30120m-c.pdf pdf_icon

RUH30120M-CN-Channel Advanced Power MOSFETFeatures Pin Description 30V/120A,RDS (ON) =1.6m(Typ.)@VGS=10V DDDDRDS (ON) =2.0m(Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche testedG Lead Free and Green Devices Available (RoHS Compliant)SSSPIN1PIN1PDFN5060DApplications DC/DC Converters On board powe

9.7. Size:414K ruichips
ruh3051m2.pdf pdf_icon

RUH3051M2N-Channel Advanced Power MOSFETFeatures Pin Description 30V/50A,RDS (ON) =4.2m(Typ.)@VGS=10V DDDDRDS (ON) =6m(Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche testedG Lead Free and Green Devices Available (RoHS Compliant)SSSPIN1PIN1PDFN3333DApplications DC/DC Converters On board power for

9.8. Size:319K ruichips
ruh3025m3.pdf pdf_icon

RUH3025M3N-Channel Advanced Power MOSFETFeatures Pin Description 30V/25A,DRDS (ON) =10m(Typ.)@VGS=10VDDRDS (ON) =16m(Typ.)@VGS=4.5VD Uses Ruichips Advanced RUISGTTM Technology Low Gate Charge Minimizing Switching LossG Ultra Low On-Resistance SSS ESD protected 100% Avalanche TestedPIN1 Lead Free and Green Devices (RoHS Compliant)D

9.9. Size:285K ruichips
ruh3090m.pdf pdf_icon

RUH3090MN-Channel Advanced Power MOSFETFeatures Pin Description 30V/90A,DDRDS (ON) =2.6m(Typ.)@VGS=10VDDRDS (ON) =3.6m(Typ.)@VGS=4.5V Using Ruichips Advanced SGTTM TechnologyG Ultra Low On-ResistanceSS 100% Avalanche TestedS Reliable and Rugged Qualified According to JEDEC CriteriaPIN1 Lead Free and Green Devices (RoHS Compliant

9.10. Size:716K ruichips
ruh30j120m.pdf pdf_icon

RUH30J120MDual Asymmetric N-Channel MOSFETFeatures Pin Description Die 1 30V/50ARDS (ON) =3.8m(Typ.)@VGS=10VRDS (ON) =5.5m(Typ.)@VGS=4.5V Die 2 30V/120ARDS (ON) =2.2m(Typ.)@VGS=10VRDS (ON) =3.0m(Typ.)@VGS=4.5V Ultra Low On-Resistance Uses Ruichips advanced SGT technology 100% avalanche testedPIN1 Lead Free and Green Devices Available (RoHS

9.11. Size:684K ruichips
ruh30j51m.pdf pdf_icon

RUH30J51M Dual Symmetric N-Channel MOSFETFeatures Pin Description 30V/50A,S2S2RDS (ON) =5m(Typ.)@VGS=10VS2G2RDS (ON) =8m(Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching SpeedD1D1D1 100% avalanche tested 100% avalanche testedD1 Lead Free and Green Devices Available (RoHS Compliant)G1PIN1DFN5*6Applicationspp DC/DC Co

9.12. Size:708K ruichips
ruh3090m3-c.pdf pdf_icon

RUH3090M3-CN-Channel Advanced Power MOSFETFeatures Pin Description 30V/90A,RDS (ON) =2.7m(Typ.)@VGS=10V DDDRDS (ON) =4m(Typ.)@VGS=4.5VD Uses Ruichips Advanced RUISGTTM Technology Low Gate Charge Minimizing Switching LossG Ultra Low On-ResistanceSS Excellent QgxRDS(on) product(FOM) S 100% Avalanche TestedPIN1 Lead Free and Green Devi

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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RUH3030M3 MOSFET. Datasheet pdf. Equivalent

RUH3030M3 Datasheet (PDF)

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