All MOSFET. H10N60P Datasheet

 

H10N60P Datasheet and Replacement


   Type Designator: H10N60P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 164 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 9.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 29 nC
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO-220AB
 

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H10N60P Datasheet (PDF)

 ..1. Size:405K  cn haohai electr
 h10n60p h10n60f.pdf pdf_icon

H10N60P

10N60 SeriesN-Channel MOSFET9.5A, 600V, N H FQP10N60C H10N60P P: TO-220PHAOHAI 50Pcs 1000Pcs 5000Pcs10N60FQPF10N60C H10N60F F: TO-220F10N60 Series Pin AssignmentFeaturesID=9.5AOriginative New De

 8.1. Size:273K  samsung
 sgh10n60rufd.pdf pdf_icon

H10N60P

CO-PAK IGBT SGH10N60RUFDFEATURESTO-3P* Short Circuit rated 10uS @Tc=100 * High Speed Switching* Low Saturation Voltage : VCE(sat) = 1.95 V @ Ic=10A* High Input Impedance* CO-PAK, IGBT with FRD : Trr = 42nS (Typ)CAPPLICATIONS* AC & DC Motor controlsG* General Purpose Inverters* Robotics , Servo Controls* Power Supply E* Lamp BallastABSOLUTE MAXIMUM RATINGS

 8.2. Size:923K  samsung
 ssh10n60a.pdf pdf_icon

H10N60P

Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 10 A Improved Gate Charge Extended Safe Operating AreaA Lower Leakage Current : 25 (Max.) @ VDS = 600V Low RDS(ON) : 0.646 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

 8.3. Size:610K  ixys
 ixsh10n60b2d1 ixsq10n60b2d1.pdf pdf_icon

H10N60P

High Speed IGBT IXSH 10N60B2D1VCES = 600 VIXSQ 10N60B2D1with Diode IC25 = 20 AShort Circuit SOA Capability VCE(sat) = 2.5 VPreliminary Data SheetD1Symbol Test Conditions Maximum Ratings TO-247 (IXSH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VG(TAB)CEIC25 TC = 25C20 AIC110 TC = 110

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