H10N65P PDF and Equivalents Search

 

H10N65P Specs and Replacement

Type Designator: H10N65P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 164 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 140 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.98 Ohm

Package: TO-220AB

H10N65P substitution

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H10N65P datasheet

 ..1. Size:405K  cn haohai electr
h10n65p h10n65f.pdf pdf_icon

H10N65P

10N65 Series N-Channel MOSFET 9.5A, 650V, N H FQP10N65C H10N65P P TO-220AB HAOHAI 50Pcs 1000Pcs 5000Pcs 10N65 FQPF10N65C H10N65F F TO-220FP 10N65 Series Pin Assignment Features ID=9.5A Originativ... See More ⇒

 8.1. Size:170K  hsmc
h10n65.pdf pdf_icon

H10N65P

Spec. No. MOS200906 HI-SINCERITY Issued Date 2009.03.23 Revised Date 2009.08.05 MICROELECTRONICS CORP. Page No. 1/6 H10N65 Series H10N65 Series Tab 3-Lead Plastic TO-220AB N-Channel Power MOSFET (650V,10A) Package Code E Pin 1 Gate Pin 2 & Tab Drain Applications Pin 3 Source 3 2 Switch Mode Power Supply 1 3-Lead TO-220FP) Uninterruptable P... See More ⇒

 9.1. Size:273K  samsung
sgh10n60rufd.pdf pdf_icon

H10N65P

CO-PAK IGBT SGH10N60RUFD FEATURES TO-3P * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage VCE(sat) = 1.95 V @ Ic=10A * High Input Impedance * CO-PAK, IGBT with FRD Trr = 42nS (Typ) C APPLICATIONS * AC & DC Motor controls G * General Purpose Inverters * Robotics , Servo Controls * Power Supply E * Lamp Ballast ABSOLUTE MAXIMUM RATINGS... See More ⇒

 9.2. Size:923K  samsung
ssh10n60a.pdf pdf_icon

H10N65P

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 10 A Improved Gate Charge Extended Safe Operating Area A Lower Leakage Current 25 (Max.) @ VDS = 600V Low RDS(ON) 0.646 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value... See More ⇒

Detailed specifications: RUQ4040M2, H0110D, H0110K, H01H14B, H01H14D, H01P13D, H01P13K, H10N60P, BS170, H12N60P, H12N65P, H15N10U, H15N10D, H1N60U, H1N60D, H2301, H2302

Keywords - H10N65P MOSFET specs

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