H2N65U Specs and Replacement
Type Designator: H2N65U
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 44 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 5.5 Ohm
Package: TO-251
H2N65U substitution
- MOSFET ⓘ Cross-Reference Search
H2N65U datasheet
h2n65u h2n65d.pdf
2N65 Series N-Channel MOSFET 2A, 650V, N H FQU2N65C H2N65U U TO-251 80 / 4Kpcs/ 24Kpcs HAOHAI 2N65 FQD2N65C H2N65D D TO-252 25Kpcs 2.5K/ 5Kpcs/ 2N65 Series Pin Assignment APPLICATION ID=2A... See More ⇒
lnd2n65 lnc2n65 lng2n65 lnh2n65.pdf
LND2N65/LNC2N65/LNG2N65/LNH2N65 Lonten N-channel 650V, 2A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 650V advanced planer VDMOS technology. The ID 2A resulting device has low conduction resistance, RDS(on),max 5.2 superior switching performance and high avalance Qg,typ 10.2 nC energy. Features Low RDS(on) Low gate charge... See More ⇒
lnd2n65 lnc2n65 lng2n65 lnh2n65 lnu2n65.pdf
LND2N65/LNC2N65/LNG2N65/LNH2N65/LNU2N65 Lonten N-channel 650V, 2A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 650V DSS advanced planer VDMOS technology. The I 2A D resulting device has low conduction resistance, R 5.2 DS(on),max superior switching performance and high avalance Q 10.2 nC g,typ energy. Features Low R DS(on) Low gate... See More ⇒
Detailed specifications: H1N60D, H2301, H2302, H2302A, H2N60P, H2N60F, H2N60U, H2N60D, STF13NM60N, H2N65D, H4N60P, H4N60F, H4N60U, H4N60D, H4N65U, H4N65D, H5N50U
Keywords - H2N65U MOSFET specs
H2N65U cross reference
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: MS23N26 | HM16N50F | TK50F15J1
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