All MOSFET. H4N60U Datasheet

 

H4N60U Datasheet and Replacement


   Type Designator: H4N60U
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO-251
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H4N60U Datasheet (PDF)

 ..1. Size:370K  cn haohai electr
 h4n60u h4n60d.pdf pdf_icon

H4N60U

4N60 SeriesN-Channel MOSFET4A, 600V, N H FQU4N60C H4N60U U: TO-251 80/ 4Kpcs/ 24KpcsHAOHAI4N60FQD4N60C H4N60D D: TO-252 25Kpcs 2.5K/ 5Kpcs/4N60 Series Pin AssignmentAPPLICATIONID=4A

 9.1. Size:178K  1
 ssp4n55 ssp4n60 ssh4n55 ssh4n60.pdf pdf_icon

H4N60U

 9.2. Size:441K  semelab
 ssh4n55 ssh4n60.pdf pdf_icon

H4N60U

SSH4N55 PCB24

 9.3. Size:1293K  lonten
 lnc4n60 lnd4n60 lng4n60 lnh4n60 lnf4n60.pdf pdf_icon

H4N60U

LNC4N60\LND4N60\LNG4N60\LNH4N60\LNF4N60Lonten N-channel 600V, 4A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 600VDSSadvanced planar VDMOS technology. The I 4ADresulting device has low conduction resistance, R 2.4DS(on),maxsuperior switching performance and high avalance Q 12.8 nCg,typenergy.Features Low RDS(on) Low gate

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History: STP18N10FI | SM4186T9RL | APT10021JFLL | TPCA8047-H | NP180N04TUJ | SSW65R190S2 | WMM07N65C4

Keywords - H4N60U MOSFET datasheet

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