All MOSFET. H8N60F Datasheet

 

H8N60F Datasheet and Replacement


   Type Designator: H8N60F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO-220F
 

 H8N60F substitution

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H8N60F Datasheet (PDF)

 ..1. Size:405K  cn haohai electr
 h8n60p h8n60f.pdf pdf_icon

H8N60F

8N60 SeriesN-Channel MOSFET7.5A, 600V, N H FQP8N60C H8N60P P: TO-220AB8N60 HAOHAI 50Pcs 1000Pcs 5000PcsFQPF8N60C H8N60F F: TO-220FP8N60 Series Pin AssignmentFeaturesID=7.5AOriginative New Design

 9.1. Size:390K  motorola
 mth8n55 mth8n60 mtm8n60.pdf pdf_icon

H8N60F

Datasheet: H5N60D , H6N70P , H6N70F , H6N70U , H6N70D , H7N60P , H7N60F , H8N60P , 2N7002 , H8N65P , H8N65F , H90N71P , H90N71F , HIRFZ24NP , HIRFZ24NF , HIRFZ44N , HIRFZ44F .

History: IPS60R280PFD7S | MTP2N40 | DMN2009LSS | DMN2005LPK | APT5014BLL | MTM86124 | SHD226701

Keywords - H8N60F MOSFET datasheet

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