H8N65F PDF and Equivalents Search

 

H8N65F Specs and Replacement

Type Designator: H8N65F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO-220F

H8N65F substitution

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H8N65F datasheet

 ..1. Size:405K  cn haohai electr
 h8n65p h8n65f.pdf pdf_icon

H8N65F

8N65 Series N-Channel MOSFET 7.5A, 650V, N H FQP8N65C H8N65P P TO-220AB HAOHAI 50Pcs 1000Pcs 5000Pcs 8N65 FQPF8N65C H8N65F F TO-220FP 8N65 Series Pin Assignment Features ID=7.5A Originative New Design ... See More ⇒

Detailed specifications: H6N70F, H6N70U, H6N70D, H7N60P, H7N60F, H8N60P, H8N60F, H8N65P, AO4407A, H90N71P, H90N71F, HIRFZ24NP, HIRFZ24NF, HIRFZ44N, HIRFZ44F, HLML6401, HMDN3010D

Keywords - H8N65F MOSFET specs

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