HUFA76419D_F085 MOSFET. Datasheet pdf. Equivalent
Type Designator: HUFA76419D_F085
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 75 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 16 V
Maximum Drain Current |Id|: 20 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 23 nC
Maximum Drain-Source On-State Resistance (Rds): 0.037 Ohm
Package: TO252, DPAK
HUFA76419D_F085 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HUFA76419D_F085 Datasheet (PDF)
0.1. hufa76419d3-s hufa76419d f085.pdf 
Size:197K _fairchild_semi
HUFA76419D3, HUFA76419D3S Data Sheet December 2001 20A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET® Power MOSFETs Packaging Features JEDEC TO-251AA JEDEC TO-252AA • Ultra Low On-Resistance - rDS(ON) = 0.037Ω, VGS = 10V DRAIN DRAIN - rDS(ON) = 0.043Ω, VGS = 5V SOURCE (FLANGE) (FLANGE) DRAIN GATE • Simulation Models - Temperature Compensated PSPICE® and SABER™
4.1. hufa76419d3s.pdf Size:194K _fairchild_semi
HUFA76419D3, HUFA76419D3S Data Sheet December 2001 20A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET® Power MOSFETs Packaging Features JEDEC TO-251AA JEDEC TO-252AA • Ultra Low On-Resistance - rDS(ON) = 0.037Ω, VGS = 10V DRAIN DRAIN - rDS(ON) = 0.043Ω, VGS = 5V SOURCE (FLANGE) (FLANGE) DRAIN GATE • Simulation Models - Temperature Compensated PSPICE® and SABER™
4.2. hufa76419d3.pdf Size:196K _fairchild_semi
HUFA76419D3, HUFA76419D3S Data Sheet December 2001 20A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET® Power MOSFETs Packaging Features JEDEC TO-251AA JEDEC TO-252AA • Ultra Low On-Resistance - rDS(ON) = 0.037Ω, VGS = 10V DRAIN DRAIN - rDS(ON) = 0.043Ω, VGS = 5V SOURCE (FLANGE) (FLANGE) DRAIN GATE • Simulation Models - Temperature Compensated PSPICE® and SABER™
Datasheet: FQD5N20L , FQP12P10 , FQD5N60C , FDS4675 , FQD5P10 , FQD5P20 , FQD6N25 , FQD6N40C , FDS4435 , FQD6N50C , FQD7N10L , HUFA75645S3S , FQD7N20L , IRFS450B , FQD7N30 , FQD7P06 , FQD7P20 .
