All MOSFET. HNM2302 Datasheet

 

HNM2302 Datasheet and Replacement


   Type Designator: HNM2302
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id|ⓘ - Maximum Drain Current: 3.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT-23
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HNM2302 Datasheet (PDF)

 ..1. Size:280K  cn haohai electr
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HNM2302

HNM2302N-Channel MOSFETs3.5A, 20V N N MOS HNM2302N-Channel Enhancement Mode Field Effect TransistorN-ChannelEnhancement ModeFeaturesField Effect Transistor20V, 3.5A, RDS(ON)=60m @VGS=4.5VHigh dense cell design for extremely low RDS(ON)Rugged and reliable

 0.1. Size:281K  cn haohai electr
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HNM2302

HNM2302ALBN-Channel MOSFETs3.7A, 20V N N HNM2302ALBN-Channel Enhancement Mode Field Effect Transistor SMDN-ChannelEnhancement ModeFeaturesField Effect Transistor20V, 3.7A, RDS(ON)=50m @ VGS=4.5VHigh dense cell design for extremely low RDS(ON)

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: FCP125N60E | IRFB3004GPBF | BRCS200P03DP | HMS4264 | APT6029SLLG | TSM4424CS | LKK47-06C5

Keywords - HNM2302 MOSFET datasheet

 HNM2302 cross reference
 HNM2302 equivalent finder
 HNM2302 lookup
 HNM2302 substitution
 HNM2302 replacement

 

 
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