All MOSFET. HNM2302 Datasheet

 

HNM2302 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HNM2302
   Marking Code: A2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 3.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT-23

 HNM2302 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HNM2302 Datasheet (PDF)

 ..1. Size:280K  cn haohai electr
 hnm2302.pdf

HNM2302 HNM2302

HNM2302N-Channel MOSFETs3.5A, 20V N N MOS HNM2302N-Channel Enhancement Mode Field Effect TransistorN-ChannelEnhancement ModeFeaturesField Effect Transistor20V, 3.5A, RDS(ON)=60m @VGS=4.5VHigh dense cell design for extremely low RDS(ON)Rugged and reliable

 0.1. Size:281K  cn haohai electr
 hnm2302alb.pdf

HNM2302 HNM2302

HNM2302ALBN-Channel MOSFETs3.7A, 20V N N HNM2302ALBN-Channel Enhancement Mode Field Effect Transistor SMDN-ChannelEnhancement ModeFeaturesField Effect Transistor20V, 3.7A, RDS(ON)=50m @ VGS=4.5VHigh dense cell design for extremely low RDS(ON)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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