FQD7N20L MOSFET. Datasheet pdf. Equivalent
Type Designator: FQD7N20L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 45 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 5.5 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 0.75 Ohm
Package: TO252, DPAK
FQD7N20L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQD7N20L Datasheet (PDF)
0.1. fqd7n20l fqu7n20l.pdf 
Size:569K _fairchild_semi
December 2000 TM QFET QFET QFET QFET FQD7N20L / FQU7N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5.5A, 200V, RDS(on) = 0.75Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 8.5 pF) This advanced
0.2. fqd7n20ltf fqd7n20ltm.pdf Size:622K _fairchild_semi
October 2008 QFET® FQD7N20L / FQU7N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5.5A, 200V, RDS(on) = 0.75Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 8.5 pF) This advanced technology is especi
7.1. fqd7n20tf fqd7n20tm fqd7n20 fqu7n20.pdf Size:802K _fairchild_semi
October 2008 QFET® FQD7N20 / FQU7N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 5.3A, 200V, RDS(on) = 0.69Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 8.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 9.0 pF) This advanced technology has been especia
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
