NCE25P60K MOSFET. Datasheet pdf. Equivalent
Type Designator: NCE25P60K
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 140 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 56 nC
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 182 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: TO-252
NCE25P60K Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCE25P60K Datasheet (PDF)
nce25p60k.pdf
NCE25P60Khttp://www.ncepower.comNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE25P60K uses advanced trench technology anddesign to provide excellent R with low gate charge .ThisDS(ON)device is well suited for use as a load switch or in PWMapplications.Schematic diagramGeneral Features V =-60V,I =-50ADS DR
nce25td120lp.pdf
PbFreeProduct NCE25TD120LP 1200V, 25A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp
nce25td120w.pdf
Pb Free ProductNCE25TD120W1200V, 25A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
nce25td120wt.pdf
Pb Free ProductNCE25TD120WT1200V, 25A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
nce25td135lt.pdf
PbFreeProduct NCE25TD135LT 1350V, 25A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1350V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp
nce25td120bd.pdf
Pb Free ProductNCE25TD120BD1200V, 25A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
nce25gd135t.pdf
Pb Free ProductNCE25GD135T http://www.ncepower.com NCE25GD135T 1350V, 25A, Trench NPT IGBT Features Trench NPT( Non Punch Through) IGBT High speed switching Low saturation voltage: VCE(sat)=2.0V@IC=25A High input impedance Applications Inductive heating, Microwave oven, Inverter, UPS, etc. Soft switching applications General Description Using advanced Tre
nce25tc120hd.pdf
Pb Free ProductNCE25TC120HD1200V, 25A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
nce25td120lt.pdf
PbFreeProduct NCE25TD120LT 1200V, 25A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp
nce25td120bt.pdf
PbFreeProduct NCE25TD120BT 1200V, 25A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp
nce25td135lp.pdf
PbFreeProduct NCE25TD135LP 1350V, 25A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1350V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) Positive temp
nce25td120vtp.pdf
Pb Free ProductNCE25TD120VTP1200V, 25A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
nce25td120vd.pdf
Pb Free ProductNCE25TD120VD1200V, 25A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
nce25td120vt.pdf
Pb Free ProductNCE25TD120VT1200V, 25A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology offering Very low VCE(sat) High speed switching
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